Page 78 - Semiconductor Manufacturing Handbook

Geng(SMH)_CH06.qxd 04/04/2005 19:37 Page 6.17

PLASMA PROCESS CONTROL

PLASMA PROCESS CONTROL 6.17

27. Brcka, J., Ring-shaped High-density Plasma Source and Method, US Patent 6523493, 2003.
28. Keane, A. R., and S. E. Hauer, Automatic Impedance Matching Apparatus and Method, US Patent 5,195,045,
1993.
29. Harnett, S., Fuzzy Logic Tuning of RF Matching Network, US Patent 5842154, 1997.
30. Brounley, R. W., Solid State Plasma Chamber Tuner, US Patent 5473291, 1995.
31. Wilbur, J., Ratiometric Autotuning Algorithm for RF Plasma Generator, US Patent 6020794, 2000.
32. Abraham, I. C., et al., “Ion energy distributions versus frequency and ion mass at the RF-biased electrode in
an inductively driven discharge,” Journal Vacuum Science Technology A, Vol. 20, No. 5, pp. 1759–1768, 2002.
33. Vincent, T. L., and R. L. Laxminarayan, “Approach for control of high-density plasma reactors through opti-
mal pulse shaping,” Journal Vacuum Science Technology A, Vol. 20, No. 5, pp. 1722–1732, 2002.
34. Ashida, S., C. Lee, and M. A. Lieberman, “Spatially averaged (global) model of time modulated high density
argon plasmas,” Journal Vacuum Science Technology A, Vol. 13, No. 5, pp. 2498–2507, 1995.
35. Booth, J. P., G. Cunge, and N. Sadeghi, “The transition from symmetric to asymmetric discharges in pulsed
13.56 MHz capacitively coupled plasmas,” Journal of Applied Physics, Vol. 82, No. 2, pp. 552–560, 1997.
36. Boswell, R. W., and R. K. Porteous, “Etching in a pulsed plasma,” Journal of Applied Physics, Vol. 62, No. 8,
pp. 3123–3129, 1987.
37. Jung, C. O., et al., “Advanced plasma technology in microelectronics,” Thin Solid Films, 341, pp. 112–119,
1999.
38. Hebner, G. A., and C. B. Fleddermann, “Characterization of pulse-modulated inducively coupled plasmas in
argon and chlorine,” Journal of Applied Physics, Vol. 82, No. 6, pp. 2814–2821, 1997.
39. Malyshev, M. V., et al., “Dynamics of pulsed-power chlorine plasmas,” Journal of Applied Physics, Vol. 86,
No. 9, pp. 4813–4820, 1999.
40. Cunge, G., et al., “Characterization of the E to H transition in a pulsed inductively coupled plasma discharge
with coil geometry: Bi-stability and hysteresis,” Plasma Sources Science Technology, Vol. 8, pp. 576–586,
1999.
41. Samukawa, S., and H. Ohtake, “Pulse-time modulated electron cyclotron resonance plasma discharge for highly
anisotropic and charge-free etching,” Journal Vacuum Science Technology A, Vol. 14, No. 6, pp. 3049–3058,
1996.
42. Overzet, L. J., and F. Y. Leong-Rousey, “Time resolved power and impedance measurement of pulsed radio
frequency discharge,” Plasma Sources Science Technology, Vol. 4, pp. 432–443, 1995.
43. Miranda, A. J., and C. J. Spanos, “Impedance modeling of a Cl /He plasma discharge for a very large scale inte-
2
grated circuit production monitoring,” Journal Vacuum Science Technology A, Vol. 14, No. 3, pp. 1888–1893,
1996.
44. Andries, B., G. Ravel, and L. Peccoud, “Electrical characterization of radio-frequency parallel-plate capaci-
tively coupled discharges,” Journal Vacuum Science Technology A, Vol. 7, No. 4, pp. 2774–2783, 1989.
45. Godyak, V. A., and R. B. Piejak, “In situ simultaneous radio frequency discharge power measurements,”
Journal Vacuum Science Technology A, Vol. 8. No. 5, pp. 3833–3837, 1990.
46. Braithwaite, N. St. J., “Internal and external electrical diagnostics of RF plasmas,” Plasma Sources Science
Technology, Vol. 6, pp. 133–139, 1997.
47. Kawata, H., et al., “Power measurements for radio-frequency discharges with a parallel-plate-type reactor,”
Journal of the Electrochemical Society, Vol. 145, No. 5, pp. 1701–1707, 1998.
48. Steffens, K. L., and M. A. Sobolewski, “Planar laser-induced fluorescence of CF2 in O2/CF4 and O2/C2F6
chamber cleaning plasmas: Spatial uniformity and comparison to electrical measurements,” Journal Vacuum
Science Technology A, Vol. 17, No. 2, pp. 517–527, 1999.
49. Law, V. J., et al., “Remote-coupled sensing of plasma harmonics and process end point detection,” Surface
Engineering, Surface Instrumentation and Vacuum Technology, Vol. 57, pp. 351–364, 2000.
50. Coumou, D. J., “Advanced RF metrology for plasma process control,” Semiconductor International, 2003.
51. Gerrish, K. S., and D. F., Vona, Jr., Baseband V-I Probe, US Patent 5770922, 1998.
52. Coumou, D. J., RF Power Probe Head with a Thermally Conductive Bushing, US Patent 6559650, 2003.
53. Ukai, K., and K. Hanazawa, “End-point determination of aluminum reactive ion etching by discharge imped-
ance monitoring,” Journal Vacuum Science Technology, Vol. 16, No. 2, pp. 385–387, 1979.

Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
Any use is subject to the Terms of Use as given at the website.