Page 53 - An Introduction to Microelectromechanical Systems Engineering

32 Materials for MEMS

[16] Rogers, C., “Intelligent Materials,” Scientific American, Vol. 273, No. 3, September 1995,
pp. 154–157.
[17] Kovacs, G. T. A., Micromachined Transducers Sourcebook, Boston, MA: WCB/McGraw-
Hill, 1998, pp. 211–215.
[18] Smith, C. S., “Piezoresistive Effect in Germanium and Silicon,” Physical Review, Vol. 94,
1954, pp. 42–49.
[19] Gieles, C. M., “Subminiature Silicon Pressure Sensor Transducer,” Digest IEEE
International Solid-State Circuits Conference, Philadelphia, PA, February 19–21, 1969,
pp. 108–109.
[20] Kanda, Y., “A Graphical Representation of the Piezoresistive Coefficients in Silicon,” IEEE
Transactions on Electron Devices, Vol. ED-29, No. 1, 1982, pp. 64–70.
[21] Middelhoek, S., and S. A. Audet, Silicon Sensors, San Diego, CA: Academic Press, 1989.
[22] Curie, P., and J. Curie, “Development by Pressure of Polar Electricity in Hemihedral Crys-
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[23] Cady, W. G., Piezoelectricity, New York: Dover, 1964.
[24] Zelenka, J., Piezoelectric Resonators and their Applications, Amsterdam, The Netherlands:
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[25] MacDonald, D. K. C., Thermoelectricity: An Introduction to the Principles, New York:
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Selected Bibliography

Dyos, G. T., and T. Farrell (eds.), Electrical Resistivity Handbook, London: Peter
Pererginus, 1992.
Hull, R. (ed.), Properties of Crystalline Silicon, London: INSPEC, Institution of Electrical
Engineers, 1999.
Kittel, C., Introduction to Solid State Physics, 6th edition, New York: Wiley, 1986.
Sze, S. M. (ed.), Semiconductor Sensors, New York: Wiley, 1994.
Sze, S. M., Physics of Semiconductor Devices, 2nd edition, New York: Wiley, 1981.