Page 96 - An Introduction to Microelectromechanical Systems Engineering

Summary 75

• Material deposition, including thin film deposition and bonding processes;
• Pattern definition using lithography;
• Etching and mechanical material removal.

A complete micromachining process flow consists of a series of steps using a
number of methods from the toolbox to build complex microstructures one layer at
a time.

References

[1] Katz, L. E., “Oxidation,” in VLSI Technology, S. M. Sze (ed.), New York: McGraw-Hill,
1983, pp. 131–167.
[2] Thornton, J. A., and D. W. Hoffman, “Stress Related Effects in Thin Films,” Thin Solid
Films, Vol. 171, 1989, pp. 5–31.
[3] Williams, K. R., and R. S. Muller, “Etch Rates for Micromachining Processing,” Journal of
Microelectromechanical Systems, Vol. 5, No. 4, December 1996, pp. 256–269.
[4] Williams, K. R., K. Gupta, and M. Wasilik, “Etch Rates for Micromachining Processing–
Part II,” Journal of Microelectromechanical Systems, Vol. 12, No. 6, December 2003,
pp. 761–778.
[5] Williams, K., “Etching,” in Properties of Crystalline Silicon, R. Hull (ed.), London:
INSPEC, The Institution of Electrical Engineers, 1999, Chapter 16.
[6] Kovacs, G. T. A., N. I. Maluf, and K. E. Petersen, “Bulk Micromachining of Silicon,” Pro-
ceedings of the IEEE, Vol. 86, No. 8, August 1998, pp. 1536–1551.
[7] Seidel, H., et al., “Anisotropic Etching of Crystalline Silicon in Alkaline Solutions,” Journal
of Electrochemical Society, Vol. 137, No. 11, November 1990, pp. 3612–3632.
[8] Schnakenberg, U., W. Benecke, and P. Lange, “TMAHW Etchants for Silicon
Micromachining,” Proc. 1991 Int. Conf. on Solid-State Sensors and Actuators, San Fran-
cisco, CA, June 24–27, 1991, pp. 815–818.
[9] Ammar, E. S., and T. J. Rodgers, “UMOS Transistors on (110) Silicon,” IEEE Transactions
on Electron Devices, Vol. ED-27, No. 5, May 1980, pp. 907–914.
[10] Sandmaier, H., et al., “Compensation Techniques in Anisotropic Etching of (100)-Silicon
Using Aqueous KOH,” Proc. 1991 Int. Conf. on Solid-State Sensors and Actuators, San
Francisco, CA, June 24–27, 1991, pp. 456–459.
[11] Waggener, H. A., “Electrochemically Controlled Thinning of Silicon,” Bell System Tech-
nology Journal, Vol. 50, 1970, pp. 473–475.
[12] Kloeck, B., et al., “Study of Electrochemical Etch-Stop for High Precision Thickness Con-
trol of Silicon Membranes,” IEEE Transactions on Electron Devices, Vol. 36, No. 4, April
1989, pp. 663–669.
[13] Reay, R. J., E. H. Klaassen, and G. T. A. Kovacs, “Thermally and Electrically Isolated
Single-Crystal Silicon Structures in CMOS Technology,” IEEE Electron Device Letters,
Vol. 15, October 1994, pp. 309–401.
[14] Bhardwaj, J., and H. Ashraf, “Advanced Silicon Etching Using High Density Plasmas,”
Proc. SPIE, Micromachining and Microfabrication Process Technology Symp., Austin, TX,
October 23–24, 1995, Vol. 2639, pp. 224–233.
[15] Lärmer, F., and P. Schilp, “Method of Anisotropically Etching Silicon,” German Patent DE
4 241 045, 1994.
[16] Ayón, A. A., et al., “Etching Characteristics and Profile Control in a Time Multiplexed
Inductively Coupled Plasma Etcher,” Tech. Digest Solid-State Sensor and Actuator Work-
shop, Hilton Head Island, SC, June 8–11, 1998, pp. 41–44.