Page 410 - Academic Press Encyclopedia of Physical Science and Technology 3rd Chemical Engineering

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Encyclopedia of Physical Science and Technology EN009J-427 July 6, 2001 20:25

Metalorganic Chemical Vapor

Deposition (MOCVD)

Russell D. Dupuis

University of Texas at Austin

I. Summary of the Metalorganic Chemical Vapor
Deposition Process
II. Properties of Common Metalorganics
and Hydrides Used for MOCVD
III. Growth of III–V Compound Semiconductors
by MOCVD
IV. Some Representative Other Materials Grown
by MOCVD
V. Other Developments in MOCVD
VI. Future Vision
VII. Summary and Conclusions

GLOSSARY Five-to-three ratio ([V]/[III] or simply V/III) The ratio
of the sum of the partial pressures of all precursors for
Chemical vapor deposition (CVD) The deposition of Column V species to the sum of the partial pressures
materials using one or more chemically driven pro- of all of the Column III precursors in a growth process.
cesses that employ vapor-phase transport of the Normally, the V/III ratio for MOCVD is much greater
reagents to the deposition zone. than 1.
Epitaxy The deposition of a single-crystal film of a ma- Heterogeneous chemical reactions Chemical reactions
terial upon a template of atoms provided by the surface that occur between a precursor in one phase at the in-
of a crystalline solid called the “substrate.” Such a film terface between this phase and another phase (e.g., a
is termed an “epitaxial layer.” If the film and substrate vapor phase and a solid phase).
are composed of materials having the same lattice pa- Homogeneous chemical reactions Chemical reactions
rameter, the film is “homoepitaxial,” and if the film that occur only between precursors in the same phase
and substrate are formed from materials with different as the phase of the input precursors. The phase may be
lattice parameters, the film is “heteroepitaxial.” a solid, liquid, or gas phase.

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