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              Polymers, Photoresponsive                                                                   733





















              FIGURE 13 Structural representation of the polyphthalaldehyde
              acid-induced depolymerization mechanism.


              C. Crosslinking Mechanisms                        FIGURE 14 Structural representation of representative com-
                                                                ponents that may be employed in negative-acting, chemi-
              Chemical amplification through acid catalyzed crosslink-
                                                                cally amplified resists that undergo acid-catalyzed condensation
              ing  for  negative-working  resist  applications  has  been  polymerization.
              achieved through various mechanisms. These include
              cationic polymerization, condensation polymerization,
              electrophilic aromatic substitution, and acid catalyzed re-  polymer network that is significantly less soluble than
              arrangement. The acid species may be generated from a  the unreacted polymer resin. A post-exposure bake step
              variety of materials. 93                          prior to development is required to complete the con-
                                                                densation reaction as well as to amplify the crosslinking
                                                                yield to enhance sensitivity and improve image contrast.
                1. Cationic Polymerization Mechanisms                                                       97
                                                                Sub-0.5-µm features could be resolved with deep-UV
              The first chemically amplified resist systems to be de-  and electron-beam 98  radiation with wide process latitude
              veloped were those based on the cationic polymerization  and high sensitivity using this chemistry. Figure 15 de-
              of epoxy materials. 73,94  In general, the resolution of sub-  picts 0.5-µm images obtained in such a material upon
              0.5-µm features in resists based on this mechanism is  248-nm UV exposure. Very sensitive X-ray and e-beam
              difficult due to distortion resulting from solvent-induced  resist formulations based on similar chemistry using
              swelling of the irradiated regions. Utilizing aqueous
              base soluble materials such as poly(hydroxystyrene-
              dicyclopentyloxy methacrylate), Allen 95  was able to cir-
              cumventtheissueofswellingtodevelopahighlysensitive,
              aqueous-base-soluble i-line and e-beam resist.


                2. Condensation Polymerization Mechanisms
              Condensation polymerization mechanisms are probably
              the most prevalent in the design of chemically amplified
              negativeresists.Thesesystemsutilizeapolymerresinwith
              reactive site(s) (also called a binder) for crosslinking re-
              actions (e.g., a polymer containing a hydroxy funcation-
              ality), a radiation-sensitive acid generator, and an acid-
              activated crosslinking agent. 96   Figure 14 depicts some of
                                                                FIGURE 15 SEM images depicting 0.5-µm line/space images
              the alternative structures for the above components. The
                                                                obtained in a negative-acting, chemically amplified resist based
              photogenerated acid catalyzes the reaction between the  upon selected components shown in Fig. 15. [Courtesy of The
              resin and crosslinking agent to afford a highly crosslinked  Shipley Co.]
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