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82                            CHAPTER 3 / BACKGROUND FOR DIGITAL DESIGN


                    which represent LOAD and COUNT, respectively, are meaningful abbreviations called
                    mnemonics.



                    3.3 INTRODUCTION TO CMOS TERMINOLOGY AND SYMBOLOGY

                    Complementary MOSFET (CMOS) switching circuits are composed of n-type MOSFETs
                    (NMOS for short) and p-type MOSFETs (PMOS). As a help in reading and constructing
                    CMOS switching circuits, the simplified symbols and ideal equivalent circuits for both
                    types are given in Fig. 3.4. Thus, for either, the OFF condition is always an open circuit
                    while the ON condition is always a short circuit. But the voltage levels causing the ON and
                    OFF conditions for NMOS and PMOS are opposite; hence, they are called complementary.
                    Notice that the voltage to produce the ON or OFF condition is always applied to the gate, G,
                    and that the drain-to-source is either nonconducting (lorain = 0) for the OFF condition or
                    conducting (V DS = 0) for the ON condition. Use of Fig. 3.4 makes reading and construction
                    of CMOS circuits very easy. However, knowledge of which terminal is the drain and which
                    is the source is important only when configuring at the transistor circuit layout level.
                      Proper CMOS circuit construction requires that the NMOS and PMOS sections be posi-
                    tioned as shown in Fig. 3.5. The reason for this particular configuration is that NMOS passes



                                  Drain
                                    D                       D                      D
                                                              D ~  u
                                                                                   ,A Short Circuit
                (a)   Gate, G —                     LV —•     K£"        HV            v DS =
                                                               Circuit
                                                            I

                                    s                       s                      s
                                 Source
                                                          OFF                    ON





                                                                                   D


                                                                                   0 \ Short Circuit
                      Gate, G -d I                 HV —.                 LV
                                                                                   "J  VDS " °


                                                           S                       S
                                                          OFF                     ON
                    FIGURE 3.4
                    Symbols and ideal equivalent circuits for n and p MOSFETs: (a) NMOS. (b) PMOS.
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