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102   Diode Lasers                             Semiconductor Laser Diodes    103




                       100

                                            Multiple-transverse mode
                                             (~100 µm wide aperture)
                        10                                        power growth
                                                                   15%/year
                      CW power (W)



                        1
                               Heavy telcom
                                investments
                                                   Single-transverse mode
                                                    (~3 µm wide aperture)
                       0.1
                         1992 1994 1996 1998 2000 2002 2004 2006 2008 2010 2012 2014
                                          Year of introduction
                 Figure 5.1  Growth in multimode and single-mode reliable continuous wave (CW)
                 power for 9XX-nm.


                 5.3  High-Power Laser Diode Attributes
                      Several attributes distinguish the high-power laser class from other
                      semiconductor  lasers  and  are  important  to  their  utility.  First  is  the
                      rated optical power level at a specified reliability point. This is a key
                      tradeoff  in  almost  all  high-power  laser  designs,  because  almost  all
                      high-power lasers can operate above the rated power, though at the
                      expense of lower reliability. Power levels in the 10-W to 20-W continu-
                      ous wave (CW) range are commercially available from a single-aperture
                      source. The maximum power is typically limited by the linear power
                      density (i.e., the power divided by aperture width) at the laser facet,
                      where the light exits the confinement of the semiconductor waveguide
                      and diffracts into air. More optical power may be obtained from a single
                      chip  either  by  increasing  the  width  of  the  emission  aperture  or  by
                      forming monolithic arrays of these emitters on a laser “bar.” Although
                      these techniques increase the total power, they do so at the expense of
                      brightness. Optical power is balanced by the etendue, or the two-
                      dimensional spot size of the light in physical and numerical aperture
                      space. The brightness of the laser, defined as the optical power divided
                      by the etendue, is the physical parameter that dictates the extent to
                      which various beam-combining methods may be used to form a single,
                      higher-power beam from multiple single emitters. Recent advances in
                      higher-brightness performance have come from both increases in reliable
                      optical power from the chip and reduction of the etendue, especially
                      in the far-field divergence of light emission.
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