Page 164 - High Power Laser Handbook
P. 164

CHAPTER 6






                                                          High-Power


                                                         Diode Laser


                                                                   Arrays






                      Hans-Georg Treusch
                      Director, Trumpf Photonics, Cranbury, New Jersey

                      Rajiv Pandey
                      Senior Product Manager, DILAS Diode Laser Inc., Tucson, Arizona



                 6.1  Introduction
                      During the past decade, significant increases in electro-optical effi-
                      ciency  of  diode  lasers—from  values  typically  below  50  percent  to
                      record values of greater than 73 percent (see Chap. 5)—have enabled
                      demonstrated maximum power levels of up to 1 kW from a 10-mm-
                      wide laser bar in a lab environment. This increased efficiency, in turn,
                      has resulted in reduced heat load and internal losses in the material.
                      The latter has enabled laser resonator cavities that are longer than the
                      typical 1 mm cavities of 10 years ago—up to 4–5 mm for the highest
                      current power levels. Spreading out the heat by a factor of 4 with the
                      larger footprint and cutting the heat load in half have resulted in the
                      record value of 1 kW. 1
                         In addition to the improved performance of high-power diode
                      laser arrays with wavelength in the near-infrared (NIR), new materi-
                      als have been developed to extend the range for the wavelength into
                      the visible and midinfrared (MIR) regions. These new materials are
                      aimed at new applications in the medical field, as well as at the pump-
                      ing of eye-safe solid-state lasers in the MIR. The efficiency of these
                      new materials is lower than traditional NIR diode lasers (Fig. 6.1),
                      and high-yield assembly processes, as well as high-efficiency optical
                      coupling methods, are required to establish usable products.

                                                                             133
   159   160   161   162   163   164   165   166   167   168   169