Page 166 - High Power Laser Handbook
P. 166

134   Diode Lasers                          High-Power Diode Laser Arrays     135


                      laser bars, as well as single emitters, are assembled with the p-n junc-
                      tion very close (< 2 mm) to the heat sink or heat spreader (p side down).
                      Solder and heat sink material must be chosen carefully to avoid any
                      additional stress in the epitaxially grown layers, which would lead to
                      wavelength distortions and localized changes in polarization.
                         In the past, two different approaches were widely used for bar
                      packaging on a heat sink. The earlier process, developed in the late
                      1980s,  was  based  on  a  soft  solder  (indium)  and  could  use  copper
                      directly as the heat-sinking material (also called direct bond). Issues
                      with reducing the indium surface and the interaction of indium with
                      the necessary gold layers (brittle InAu intermetallic) required a very
                      precise process control to achieve a highly reliable soft connection of
                      the diode laser bar with the copper heat sink. The solder had to be
                      soft, because the thermal expansion coefficient of GaAs and copper
                      are different by a factor of 3. Although substantial progress was made
                      addressing these packaging problems with indium, as the diode laser
                      materials became more and more efficient and the diode bar drive
                      currents reached beyond the 100-A mark, new reliability issues sur-
                      faced with the indium bonds. The high current density and the inter-
                      est in the pulsed mode of operation, where the diode bar and the soft
                      solder have to experience many full temperature cycles, caused the
                      indium bond to fail within a couple of thousand hours of operation,
                      due to solder migration and the well-known whisker formation.
                         The increased electro-optical efficiency of the diode laser materi-
                      als favored a second approach in which an expansion-matched mate-
                      rial  is  used  to  form  a  submount  for  the  GaAs  bar.  With  these
                      submounts,  a  hard  solder  (AuSn)  can  be  used  to  package  the  bar.
                      Materials like CuW have been widely used for this approach, though
                      with  a  disadvantage  of  reduced  thermal  conductivity.  New  sub-
                      mounts, including AlN and BeO materials, offer expansion matching
                      in combination with electrical isolation to the subsequent metal heat
                      sink (Fig. 6.2). These new ceramic devices work as simple submounts




















                      Figure 6.2  Diode bar on CuW submount.
   161   162   163   164   165   166   167   168   169   170   171