Page 379 - Sami Franssila Introduction to Microfabrication
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358 Introduction to Microfabrication



            CT/PT even further: in the backend of the process the  for example, oxygen precipitation and wafer curva-
            lot is made smaller; for instance, only three wafers will  ture. Re-claim wafers are cheaper choices for non-
            be processed to completion and CT/PT can be as low  critical tests: as thin-film thickness monitors, as equip-
            as 0.5. There can be only a limited number of hot lots  ment qualification wafers or as regular particle-test
            running simultaneously because they disturb the normal  wafers.
            fab operations.
              Yields of hot lots tend to be consistently better than
            those of standard lots. This can be explained by a simple  37.4 COST-OF-OWNERSHIP (CoO)
            particle deposition model: hot lots spend less time in the
            wafer fab, and there is less time available for particles  Difficulties in tool performance assessment have led
            to deposit on the wafers.                    to the introduction of a new figure-of-merit, the cost-
              Split lots, which have process variations designed in  of-ownership, CoO, which tries to put all tools on
            them (e.g., wafers having different implant doses but  equal footing, calculated over the lifetime of the tool.
            otherwise identical processing), carry a wealth of infor-  Equipment capital investment has very little meaning in
            mation, but at the enormous cost of experimentation.  IC cost calculations if other major factors such as yield
            In split lot experiments, it is important to understand
                                                         and throughput are neglected. CoO is an estimate of all
            which process steps are single-wafer and which are  costs associated with a certain piece of equipment, and
            batch, because running split lots in batch processes is  it can be used to compare different mixes of fixed and
            time-consuming.                              running costs. Yield, or alternatively cost per good chip,
              Regular wafers are run in lots of 25 or 50 wafers.  is of paramount importance, and therefore CoO-models
            For batch processes such as oxidation, many batches are  are rather ‘personal’: equipment maintenance, process
            combined, which leads to higher CT/PT. Sometimes, a  specification tightness/looseness, the number of monitor
            lot is made up of 24 wafers plus a monitor wafer. The  wafers, all affect the yield, and the yield has often the
            monitor wafer is not physically one and the same wafer
                                                         biggest contribution to CoO.
            but an allocation only: in gate oxidation, it is a prime
            wafer that then continues to polysilicon deposition, poly
            doping and polysilicon etching, and exits after that. A  Cost/wafer = (tool cost/throughput) + process cost
            new monitor wafer starts at first inter-level dielectric                           (37.1)
            deposition, and is then used as a contact hole etch  Process cost includes chemicals, targets, water,
            monitor and as first metal resistance and step coverage  labour, electricity, administration, and so on. Wafer cost
            monitor. This monitor is not a prime wafer, but a  can be added, or treated separately. Cost-of-ownership
            monitor-quality wafer.                       (CoO) is defined as
              In addition to device and process-specific monitor
                                                               equipment + labour + consumables + operation
            wafers that run with the product wafers, a lot of other         + yield loss
            monitor wafers run in a wafer fab. These are used for  CoO =
                                                                 equipment life × throughput × utilization
                                                                            × rework rate
            • equipment qualification, for example, after mainte-                              (37.2)
              nance;                                       The following calculation (from Moritz, H.: Profes-
            • regular monitoring, for example, particle tests, film  sional i-line Lithography, Lecture Notes, IBM, 1993)
              thickness/uniformity;                      shows how different components relate to lithography
            • process development, for example, modifying an  cost.
              existing process step;
            • short loop test wafers, for example, via-chain test.
                                                         Equipment cost  $3 500 000
              In the start-up phase of a new fab, product  Equipment life  5 years
            wafers may in fact represent less than half of all  Utilization  85%
            the wafers. Test/monitor wafers are often re-claim  Throughput  25 wafers/hour
            wafers. Reclaim wafers are wafers that have been  Rework rate  0.90 (= 10% of wafers reworked)
            “reconditioned” after processing. Thin films have been
            etched away, and the wafers may have been re-
            polished and inspected. Re-claim wafers have been  This translates to 826 000 wafers processed during
            through various process steps, especially thermal pro-  equipment lifetime, or investment cost of $4.7 for a
            cesses, which affect the properties of the wafer bulk,  lithography step. Process cost is estimated as follows:
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