Page 378 - Sami Franssila Introduction to Microfabrication
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Wafer Fab 357



           that hard disk drive memory density increases faster than  one mask is product-specific, and all the other masks
           semiconductor memory density.               are shared between many products. Of course, semi-
                                                       custom chips cannot use silicon area very efficiently,
                                                       but the cost reduction relative to full custom design is
           37.2 MANUFACTURING CHALLENGES               significant.
           The IC industry is faced with a number of challenging
           issues in fab economics, device structures and pack-  37.3 CYCLE TIME
           aging. Fab cost is not only high, but the amortization
           times are also very short, five to seven years only.  Cycle time (CT) is the number of days it takes to
           Lithography cost, especially, is rising very fast, with  complete a lot. Process time (PT) is the actual time
           20- to 30-million-dollar pricetags for lithography tools  it takes for the wafer to be processed. Process time
           in sight. Wafer size transition from 200 to 300 mm intro-  is the total time when processes act on the wafers,
           duces additional costs because all tooling has to be  while cycle time includes idle time, like queuing.
           upgraded, not just process tools but metrology and test  The ratio of cycle time to process time, CT/PT, is
           tools as well. Most of the 300 mm tools for the 0.13 µm  a measure of fab efficiency. For standard processing,
           generation can later be upgraded for the 90 nm gen-  CT/PT is about 2; wafers spend half the time in queue
           eration, and a few are going to be useful even in the  and storage.
           65 nm generation. In 2003, there were 30 fabs running  Cycle time and process time are intimately coupled
           300 mm wafers.                              to batch versus single-wafer tool combination in a
             With 100 million transistors on a 0.13 µm logic chip  fab. Most front-end processes are batch, and most
           (which translates to some 20 to 30 million devices per  backend processes, single-wafer. For batch processes,
           square centimetre), design complexity is enormous, and  process time is ‘overhead + batch time’, which is fairly
           the same applies to device testing. CMOS was orig-  constant; but for single-wafer processes process time is
           inally a solution to power consumption: CMOS logic  ‘overhead + lot size × single-wafer time’, and lot size
           consumes energy only during switching, but the sheer  has a major effect. All-single-wafer fabs have been
           number of devices means that excessive amounts of  experimented with, and record cycle times of three
           waste heat are generated in advanced chips. Chip cool-  days have been demonstrated for 0.25 µm CMOS. There
           ing has two elements: hot spot cooling and overall  are no single-wafer fabs running volume production,
           cooling. Power consumption of 100 W is becoming  but in order to reduce risks associated with billion-
           typical in high-performance processors (power densi-  dollar fabs, the minifab concept has been created.
                    2
           ties 30 W/cm ), whereas processors for battery-powered  Minifabs are low-volume fabs with mostly single-
           devices consume only a fraction of a watt. Connec-  wafer and some small-batch equipment (batch size
           tions from the chip to the outside world require some  of 25 wafers in thermal processes, versus 200 wafer
           advanced solutions: attaching lead to just chip periphery  batches in high volume fabs). Such minifabs are
           is not enough when 1000 connections need to be made.  expected to be more agile because the cycle times will
           Various ball grid and bump-metallization schemes have  be shorter, and production scheduling is going to be
           been introduced. In these approaches, the traditional  more flexible. There will be little equipment duplication,
           division of labour between wafer fab and the packaging  and only some dedicated equipment for certain process
           house is shifting; a packaging house can do wafer pro-  steps. One thermal processor might be running various
           cessing – lithography, electrodeposition of bump metal  processes, maybe with only front-end versus backend
           and bump anneal – before the usual steps of testing, dic-  separation, which is for keeping metallic contamination
           ing and assembly.                           at bay.
             Because photomask cost is rapidly rising, it is  Other ways to reduce cycle time include lot status
           becoming increasingly difficult to make small series  and priority classification schemes. Hot lots (aka rush
           production. A photomask set for advanced CMOS can  lots) are priority lots that receive preferential treatment
           cost $500 000, and if a wafer sells for $10 000, anything  in the fab. When a hot lot arrives at a process tool, it
           below 50 wafers does not cover even the non-recurring  is processed in front of the queue. Hot-lot cycle time
           starting costs. Semi-custom chips solve this problem, at  may be 30% less than that of a regular lot. ‘Super hot’
           least partially: front-end processing, and therefore the  lots (aka bullet lots) are even more prioritized: process
           transistors, is identical in all products, and chips are  equipment is reserved for the super-hot lot so that it
           customized by a few customer-specific photomasking  can be processed as soon as it arrives. For a super-
           steps later in the process. In the best case, only  hot lot, CT/PT is thus 1, but there is a way to reduce
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