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6.5 MEMS Technology Pressure Sensors                                          139

                  (UTI)). However, in order to reduce the effects of parasitic capacitance and achieve
                  higher performance devices, the pressure sensor should ideally be integrated with
                  electronics. This has been achieved by combining a bulk-etched device similar to that
                  shown in Figure 6.21 with basic CMOS circuitry [65, 66], but the more common
                  solution is to employ surface micromachining. Standard sacrificial surface
                  micromachining processes have been combined with CMOS capacitance measure-
                  ment circuitry in a number of devices [67–69]. A common theme with these sensors
                  is the use of an array of sensing diaphragms to increase the measured capacitance sig-
                  nal. In some instances, diaphragms with different pressure sensitivities have been
                  incorporated onto the same die in order to broaden the range of operation [70, 71].
                  A common application of capacitive pressure sensor arrays with integrated electron-
                  ics is intravascular blood pressure measurement [72] and intracranial pressure [73].
                  This last device was coated in a silicon elastomer, NUSIL, for reasons of biocompati-
                  bility. A discussion of biocompatible coatings is included in Chapter 4.
                      Similar devices to the surface-micromachined pressure sensors have also been
                  realized using SOI wafers [74]. These devices use the buried oxide as the sacrificial
                  layer, and the hole to allow the undercutting etch is located at the center of the dia-
                  phragm. The hole is sealed afterwards by silicon nitride deposition, which results in
                  a ring shaped diaphragm as described previously. The buried oxide also isolates the
                  diaphragm from the surrounding silicon, thereby reducing parasitic capacitances. A
                  cross-section of the device is shown in Figure 6.24.
                      Another more recent development is the integration of planar coils on the
                  capacitive pressure sensor chip. The capacitor and coil form a resonant LC circuit
                  the frequency of which varies with applied pressure. By integrating the coil on the
                  sensor chip itself, it can also be used to inductively couple power into the sensor chip
                  from an external coil. After energizing the sensor circuit, the external coil is used as
                  an antenna to detect the resonant frequency. This approach is attractive for wireless
                  sensing and can be used in applications where wire links are not suitable (e.g., harsh
                  environments). Several devices have been reported in the literature from different
                  research groups including two integrated devices using electroplated coils [75, 76]
                  and a prototype microsystem on a ceramic substrate with a printed gold coil [64].


                  6.5.4  Resonant Pressure Sensors

                  Resonant pressure sensors typically use a resonating mechanical structure as a strain
                  gauge to sense the deflection of the pressure-sensitive diaphragm. Resonant sensing
                  has been discussed in Chapter 5. The resonant approach is more technically chal-
                  lenging for a number of reasons discussed below, but it does offer performance
                  specifications beyond that achievable with piezoresistive and capacitive techniques.


                                                                   Nitride seal
                                         Diaphragm
                           Metal contact

                                 Sacrifical oxide



                  Figure 6.24  Cross-section through SOI capacitive pressure sensor.
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