Page 80 - MEMS Mechanical Sensors
P. 80

4.4 MEMS Mechanical Sensor Packaging                                           69

                  electrically isolated from each other. Techniques for achieving such electrical inter-
                  connects include [10]:

                      • P-n junction feedthrough;
                      • Buried electrode feedthrough;
                      • Sealed feedthrough channels;
                      • Thermomigration of aluminum.

                      Alternatively, through-wafer interconnects that allow contacts to be made on
                  the underside of the sensor wafer are being developed [22]. Vertical vias have been
                  etched through the thickness of the wafer using a DRIE process. Vias with diameters
                  of up to 200 µm have been formed in this manner and successfully metallized along
                  the length of the channel, thereby forming a low resistance conductive path between
                  the front and back of the wafer. The underside contacts can be formed into solder
                  bumps making this approach compatible with subsequent flip chip second order
                  packaging (see Figure 4.6). The sealing of these underside contacts must be carefully
                  carried out in order to preserve the hermetic nature of the sealed chamber. A similar
                  technique that utilizes a 2-µm-thick polysilicon film heavily doped with phospho-
                  rous deposited on the inside walls of the vias has also been presented [23]. The vias
                  in this instance were just 20 µm in diameter and 400 µm long. A hermetic seal was
                  insured by subsequently filling the vias with LPCVD oxide. Similar work has also
                  been published by Chow et al. [24], and copper interconnects have been developed
                  by Nguyen et al. [25].
                      In certain applications, wafer level capping alone may not be sufficient or wafer
                  level processing may not suitable. For example, the capping material may not be
                  able to offer sufficient protection against corrosive media. In these instances, the
                  capped sensor can be coated in a protective layer or the second order package must
                  isolate and seal the device.
                      Protective coatings have been developed for a number of applications, and as
                  with wafer level packaging, they can simplify second order packaging by removing
                  the need to isolate the device. In wet applications polymer films such as Parylene
                  and silicone gels have been successfully employed [26]. Despite the absorption of
                  water molecules by these polymers, the adhesion of the film to the sensor prevents





                                Cap
                                                                               Passivation








                                                                  Bond
                       Sensor substrate
                                                                    Solder bump
                                                        Cavity                Metal
                                      Vias
                  Figure 4.6  Through-wafer contacts. (After: [22].)
   75   76   77   78   79   80   81   82   83   84   85