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                   158                       MEMS and Microstructures in Aerospace Applications


                   with no assistance from the DC bias. 22,44  Typical MEMS switches can handle 2 to
                   4 W before self-actuation becomes a problem. 34,44  RF latching occurs when the
                   switch has been actuated, and the rms signal voltage is greater than the hold voltage
                   for the switch (this is typically much less than the actuation voltage). Latching
                   occurs at powers as low as 0.5 W. These power levels are significantly less than
                   what is desired, and power handling continues to be an area of MEMS switches that
                   requires improvement. However, it should be noted that RF latching and RF self-
                   actuation are not destructive; once the RF power is reduced the switches return to
                   normal function.
                       Contact failure is the predominant failure mechanism for series switches.
                   Lifetime depends on the signal levels and on the thermal behavior of the device. 16
                   Dielectric charging can limit lifetime in capacitive switches. When large voltages
                   are applied across a dielectric, imperfections in the dielectric can lead to charge
                   storage. This stored surface charge can have very low mobility, resulting in charge
                   build up over several actuation cycles. 45  Over time, this will cause drift in the
                   actuation voltage and can result in device failure. Dielectric charging can be
                   mitigated by using alternating polarity pulses for actuation and by using a shaped
                   signal, with a high-voltage pulse for actuation followed by a lower voltage for
                   holding the switch in the down position.


                   8.3 MEMS RF PHASE SHIFTERS
                   Phased array antennas consist of multiple antennas where the transmission from
                   each antenna is phase-shifted from the others to take advantage of constructive and
                   destructive interference in order to achieve high directionality. A key component in
                   a phase array is the phase shifting element that is associated with each individual
                   antenna in the array.
                       In a comparison of MEMS phase shifters against ferrite, PIN diode, and GaAs
                   phase shifters, it has been determined that MEMS phase shifters are particularly
                   applicable to space-based radar because they are relatively small, lightweight, and
                             32
                   inexpensive. There are three common approaches to active phase shifters: switched
                   line, loaded line, and reflection. MEMS phase shifters have been developed for a
                   number of frequency ranges and applications. They have been shown to have a much
                   lower insertion loss than current phase shifters, but they also tend to have a higher
                   actuation voltage. They are also broadband, and are usually targeted toward military
                   communications systems. However, examples of phase shifters specifically targeted
                   toward satellite applications, including stub-loaded line phase shifters exist. 46

                   8.3.1 SWITCHED-LINE PHASE SHIFTERS

                   Figure 8.4 shows a schematic of a switched line (or time-delay) phase shifter. In
                   these systems transmission lines of different lengths are switched into the signal
                   path to change the signal path length. These types of phase shifters are particularly
                   good for broadband, because if the transmission lines are TEM, the phase shift is a
                   linear function of frequency, which minimizes distortion.




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