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154   •  Chapter 5  /  Diffusion


                         Using an interpolation technique as demonstrated in Example Problem 5.2 and the data presented
                         in Table 5.1, we find
                                                          x
                                                              = 0.4747                            (5.10)
                                                        21Dt
                                                                     4
                         The problem stipulates that x   0.75 mm   7.5   10  m. Therefore,
                                                             -4
                                                      7.5 * 10  m
                                                                  = 0.4747
                                                         21Dt
                         This leads to
                                                                    -7
                                                       Dt = 6.24 * 10  m 2
                         Furthermore, the diffusion coefficient depends on temperature according to Equation 5.8, and,
                                                                              5
                                                                                 2
                         from Table 5.2 for the diffusion of carbon in g-iron, D 0    2.3   10  m /s and Q d    148,000 J/mol.
                         Hence,
                                                            Q d              -7   2
                                              Dt = D 0     expa -  b(t) = 6.24 * 10  m
                                                            RT
                                                           148,000 J/mol              -7  2
                                             -5
                                                2
                                     (2.3 * 10  m /s) exp c -     #     d (t) = 6.24 * 10  m
                                                         (8.31 J/mol K)(T)
                         and, solving for the time t, we obtain
                                                                 0.0271
                                                     t (in s) =
                                                                   17,810
                                                             expa -     b
                                                                     T
                         Thus, the required diffusion time may be computed for some specified temperature (in K). The
                         following table gives t values for four different temperatures that lie within the range stipulated
                         in the problem.

                                                Temperature            Time
                                                 ( C)              s          h
                                                 900            106,400      29.6
                                                 950             57,200      15.9
                                                1000             32,300       9.0
                                                1050             19,000       5.3





            5.6  DIFFUSION IN SEMICONDUCTING MATERIALS
                                One technology that applies solid-state diffusion is the fabrication of semiconductor
                                integrated circuits (ICs) (Section 18.15). Each integrated circuit chip is a thin square
                                wafer having dimensions on the order of 6 mm   6 mm   0.4 mm; furthermore, millions
                                of interconnected electronic devices and circuits are embedded in one of the chip faces.
                                Single-crystal silicon is the base material for most ICs. In order for these IC devices to
                                function satisfactorily, very precise concentrations of an impurity (or impurities) must
                                be incorporated into minute spatial regions in a very intricate and detailed pattern on
                                the silicon chip; one way this is accomplished is by atomic diffusion.
                                   Typically, two heat treatments are used in this process. In the first, or predeposition
                                step,  impurity atoms are diffused into the silicon, often from a gas phase, the partial
                                pressure of which is maintained constant. Thus, the surface composition of the impurity
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