Page 189 - Materials Science and Engineering An Introduction
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Summary • 161
Silicon Temperature dependence Diffusion in semiconductors
Semiconductors of diffusion coefficient (impurity doping)
(Processing) (Chapter 5) (Chapters 5 & 18)
Concentration of diffusing species (C) After predeposition
Q d
D = D 0 expa - b C
RT s
After drive-in
C
B
x j
Distance into silicon (x)
800
A
700
A
A
600 + P
P
500
Temperature (°C) 400 A + B B
300 A
M(start)
200 50%
M(50%) M + A
M(90%)
100
0
10 –1 1 10 10 2 10 3 10 4 10 5
Time (s)
Isothermal transformation
diagrams
(Chapter 10)
Iron–Carbon Temperature dependence
Alloys (Steels) of diffusion coefficient
(Processing) (Chapter 5)
Tempering (tempered
martensite)
Q d
D = D 0 expa - b (Chapter 10)
RT
martensite (BCT, single phase) →
tempered martensite (a Fe 3 C phases)
