Page 267 - Materials Chemistry, Second Edition
P. 267
254 4 Semiconductors
Figure 4.15. Illustration of the float-zone (FZ) method used to convert a polysilicon ingot into single-
crystal silicon.
Figure 4.16. Position of flats on Si wafers, used to identify the crystalline plane and type of dopants (n- or
p-type). Shown are (a) n-type (100) – 1 and 2 flats 180 apart, (b) p-type (100) – 1 and 2 flats 90 apart,
(c) n-type (111) – 1 and 2 flats 45 apart, and (d) p-type (111) – 1 flat only.
