Page 265 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
P. 265

RADIATION  SENSORS    245

       Table 8.3  Some commercial radiation microsensors and their typical characteristics
   Device        Peak      Supplier/  Size/     Typical      Typical  Price
                                                                          a
                 wavelength  Part     Package   output       rise/fall  (euro )
                                                             time
   Photoconductive:
   CdS           Visible   NORP12     15  mm    1  MQ  to  100  fl 18  ms/  2.4
                   (0.53 urn)           plastic   for  0.1  to  120  ms
                                                  10 000  Lux
   Photovoltaic:
   p-n  diode    Visible   IPL1002    TO- 18 metal 0.01  to  250 ns     5.4
                   (0.75  jrni)  0BW    can       100  mW/cm 2
   PIN  diode    Visible   Siemens    TO-92     0.5  mW/cm 2  20 ns      1.8
                   (0.85  urn)  SFH206  plastic
                                                           2
   Diode  & amp.  Vis-NIR  OSI5K      TO-5  metal  30  mV/uW/cm 40 us/  30.2
                  (0.90  jim)           can                    40 |is
   n-p-n         NIR       Siemens    3 mm      50 uW/cm2    8  us/  8 us  1.0
    phototransistor  (0.86  jim)  SFH  309  plastic
  Pyroelectric:
   LiTaOS        IR  (7  to  Sentel  DP-  5  mm  metal 1800  V/W  100 ms  8.0
                   15  ^m)   2101-101   case

  "Note that  1 euro  is  worth  approximately  1.1 US  dollars  here
   a  burglar  alarm  system.  The  use  of  a  band-pass  filter  removes  sensor  drift  caused  by
   changes  in  the  ambient  conditions.
     Photoelectric  and  pyroelectric  sensors  are  made  using a  relatively mature  technology
  and  so there  is  a  very wide variety of  commercially  available  devices  based  on  different
   semiconductor  materials,  processes,  and  packages.  Table  8.3  gives  our  choice  of  the
  discrete  devices  that are commercially available together with their typical  characteristics.
     The  prices  shown  are  based  on  a one-off  price  for  1999  and  depend  on  the  choice of
  package  (e.g.  metal  can  versus  plastic  package).  The  rise  times  are  often  a  function  of
  radiation  intensity,  with higher  levels  producing  faster  responses.
     Figure  8.17 shows a photograph of three different  radiation microsensors: a CdS photo-
  conductive  sensor  (NORP12)  that has a relatively  large  active  area of  12 mm 2  and a slow
  response  time; a p-n  photodiode  (OSI5K) with  an active area of 5  mm 2  and an integrated
  operational  amplifier, and  a pyroelectric  sensor.
     Radiation  microsensors,  together  with  temperature  ICs,  are  a  relatively  mature  tech-
  nology and, therefore, can be readily employed within an integrated optoelectronic  system.
  In  fact,  the  technology has advanced to such an extent that arrays of photovoltaic  sensors
  can  be fabricated with  associated  electronics to make digital  line-scan and array  cameras.
  These  devices  may  be  regarded  here  as  smart  microsensors  because  they  usually  have
  integrated  digital read-out electronics.


  8.3.4  Microantenna

  Finally,  microwave or short-wavelength radio  waves can be detected  using a  small metal
  strip  patterned  using  UV  lithography onto  a  planar  surface.  The  miniature antenna can
   260   261   262   263   264   265   266   267   268   269   270