Page 266 - Book Hosokawa Nanoparticle Technology Handbook
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4.5 STRUCTURE CONTROL OF NANOPARTICLE COLLECTIVES BY SINTERING AND BONDING   FUNDAMENTALS


                                        Bulk properties
                          100%

                        Electrical Properties  55%  Aerosol Deposition Method  Low Temperature Sintering
                                                                                     Conventional Sintering




                                                           Conventional Thin Film Method
                                densification
                                                                 (PVD, CSD)
                                                                                           densification
                                crystallization
                                                        crystallization    densification

                                  100  200  300  400   500  600  700  800  900  1000  1100 1200 1300
                                                        Process Temperature (°C)

                  Figure 4.5.31
                  Recovering electrical properties by heat treatment.

                  greater than 20 , mirrors sufficiently large to prevent
                  distortion, and reduction of drive voltage. It is thought
                  that piezoelectric films will be desirable for such
                  applications because of their simple structure and                        Si mirror
                  high actuation force. However, these devices are dif-  PZT cantilevers
                  ficult to make using conventional thin-film deposition
                  technologies combined with MEMS fabrication
                  processes, because of low deposition rates and com-
                  plicated etching processes. Figure 4.5.32 shows an
                  optical microscanner and an enlarged image of a
                  piezoelectric actuator. To make this devise, first the
                  scanner structure was made by using conventional Si                  Si cantilever
                  micromachining, and then the AD method was used to
                  deposit a thick PZT layer. This layer was formed on an
                  Si cantilever without any damage or deformation to
                  the cantilever from the particle impingement associ-  Figure 4.5.32
                  ated with the AD method. Proper alignment of the  Resonance type optical microscanner driven by PZT thick
                  mask prevented either adhesion or stacking of raw  layer fabricated with AD method.
                  PZT particles on the mirror part. The mirror was not
                  influenced by the deposited film. The maximum mir-
                  ror scanning angle and resonance frequency in air
                  were 26  and 33 kHz, respectively, representing high-  of this actuator was 25 mm at a resonance frequency
                  speed performance. Neither mirror bending nor  of 22.4 kHz and a driving voltage of 8  V.  This
                  deformation of the scanning laser beam were    performance is suitable for applications using
                  observed by the thick structure of the microscanner  micromixers and micropumps.
                  device.  This scanner performance was higher than  6. Future prospects for using AD methods in material
                  that of scanners made with conventional methods.
                    In addition, diaphragm actuators [14] used for  integration technology
                  micropumps can be made from thin Si membranes  The AD method is a non-thermal equilibrium process,
                  deposited with the AD method and micromachined.  which solidifies feed particles at room temperature to
                  These have flat frequency response and good sym-  form films. This differs from thermal spray coating
                  metrical elastic deformation over a wide frequency  methods, which use higher temperatures for film dep-
                  range. During fatigue testing (stability of long-time  osition. There are two important features of the AD
                  performance) under high driving electrical fields,  method. One is that the AD deposition rate is higher
                  there was no de-polarization nor peeling of the AD  than that of conventional thin-film processes, because
                  deposited film from the substrate [11]. The amplitude  the deposition material is particles, which carry

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