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FUNDAMENTALS                            CH. 5 CHARACTERIZATION METHODS FOR NANOSTRUCTURE OF MATERIALS




























                  Figure 5.6.3
                  Dependence of electron mobility of ZnO thin films on the
                  grain size.
                                                                 Figure 5.6.4
                                                                 Annular dark field (ADF) STEM image of cross section of
                  This is considered to be attributable to that because  SrTiO /LaTiO superlattice.
                                                                           3
                                                                     3
                  the charge transfer occurs between the La 1 x Sr MnO 3
                                                       x
                  ferromagnetic layer and the SrTiO barrier layer, the
                                              3
                  electron spin polarization near the grain boundary is
                  weakened compared to the bulk materials [9].               TiL 2,3                 LaM 5
                    Therefore, the development of nanoprobing tech-
                  nique, which is capable of simultaneous measure-  10
                  ment of local atomic structure and electronic states is
                  recently getting more important. In the following is
                  introduced an example of measurement of electron   8
                  density distribution of a model interface between
                  SrTiO as a band insulator and LaTiO as a Mott      6
                                                   3
                       3
                  insulator using scanning transmission electron    Distance (nm)
                  microscopy (STEM) and electron energy loss spec-
                  troscopy (EELS) [10].                              4
                    Fig. 5.6.4 shows a STEM image of cross section of
                  SrTiO /LaTiO superlattice film prepared for con-   2
                       3
                              3
                  trolling the thickness of each layer precisely as inte-
                  gral multiples of lattice constant by the pulsed laser    Ti 3+   Ti 4+
                  deposition. The incident electrons focused down to  0
                  0.07nm in diameter were scattered at high angles on      2                        830 835
                  the backside of the sample, which was thinned to a
                  thickness of 30nm by scanning of an accelerated ion   Counts  (10 3  Electron)  1
                  beam, and corrected by a circular detector (annular
                  dark field mode). It differs from the observation with
                  high resolution conventional TEM in the point that       0
                  the atomic column images with high contrast corre-            455   460   465
                  sponding to the atomic number are obtained [11].                Energy loss (eV)
                    Because information of excitation of the core-level
                  electron is obtained by the energy analysis of electron  Figure 5.6.5
                  beam transmitting through the sample, the composi-  EELS spectra for La and Ti  simultaneously recorded
                  tion and the electronic state of each atomic column  across a 2-unit-cell LaTiO layer in SrTiO .
                                                                                    3          3
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