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FUNDAMENTALS CH. 6 EVALUATION METHODS FOR PROPERTIES OF NANOSTRUCTURED BODY
[2] M. Akoshima, T. Baba: Thermal diffusivity measure- [16] S. Ashida: Measurement of thermal properties of
ments of candidate reference materials by the laser nano-thin films by pico-second thermo-reflectance
flash method, Int. J. Thermophys., 26, 151–163 (2004). method and its application to the design of next-
[3] N. Taketoshi, T. Baba and A. Ono: Observation of heat generation DVD, Proceedings of the 25th Japanese
diffusion across submicrometer metal thin films using Symposium on Thermophysical Properties (2004),
a picosecond thermoreflectance technique, Jpn. J. Appl. Nagano, pp. 65–67.
Phys., 38, L1268–L1271 (1999). [17] K. Tamano, T. Yagi, Y. Sato, Y. Shigesato, N. Taketoshi
[4] N. Taketoshi, T. Baba and A. Ono: Development of a and T. Baba: Proceedings of the 25th Japanese
thermal diffusivity measurement system for metal thin Symposium on Thermophysical Properties (2004),
films using a picosecond thermoreflectance technique, Nagano, pp. 246–248.
Meas. Sci. Technol. 12, 2064–2073 (2001). [18] T. Ohtsuka, T. Yagi, N. Taketoshi, T. Baba, A.
[5] T. Baba: Thermophysical property measurement by Miyamura, Y. Sato and Y. Shigesato: Thermal diffu-
light pulse heating, Progress in Heat Transfer, New sivity measurement of TiN thin films using a ther-
x
Series Vol. 3, Yokendo, Tokyo (2000). moreflectance technique, Proceedings of the 25th
[6] T. Baba: General needs on nanoscale thermal metro- Japanese Symposium on Thermophysical Properties,
logy and the Japanese program on this subject, 2006, Kyoto, pp. 167–169.
Proceedings of Therminic Workshop 2004 Sophia
Antipolis France.
[7] BIPM, IEC, IFCC, ISO, IUPAP, and OIML, Guide to 6.4 Electric properties
the Expression of Uncertainty in Measurement (ISO,
1995).
6.4.1 Dielectric properties
[8] C.A. Paddock, G.L. Eesley: Transient thermore-
flectance from thin metal films, J. Appl. Phys., 60 Recent miniaturization and weight saving of the elec-
285–290 (1986). tronic devices requested by society have been acceler-
[9] N. Taketoshi, T. Baba and A. Ono: Picosecond ther- ated, and the internal constitution of the devices is of
moreflectance measurements of thermal diffusion in the order of several-to-tens nanometer scale. Among
the electronic materials, ferroelectrics have been used
film/substrate two-layer systems, Therm Cond., 24,
in a wide variety of applications such as multilayer
289–302 (1999).
ceramics condensers and piezoelectric devices [1].
[10] N. Taketoshi, T. Baba and A. Ono: Development of a
The properties of the ferroelectrics depend strongly
thermal diffusivity measurement system with a
not only on microstructure composed of grains and
picosecond thermoreflectance technique, High Temp. grain boundaries but also on the domain structures
High Press., 29 59–66 (1996). formed in the grains and their dynamics induced by
[11] N. Taketoshi, T. Baba and A. Ono: Electric delay tech- applying an electric field [2,3]. The domains in ferro-
nique in a picosecond thermoreflectance method for electrics are defined by the volume in which sponta-
thermophysical property measurements of thin films, neous polarization (P ) is aligned in three dimensions,
s
Rev. Sci. Instrum., 76 1–8 (2006). and the size of the ferroelectric domains are in the
range from several nanometers to micrometers [4].
[12] T. Baba, N. Taketoshi, K. Hatori, K. Shinzato, T. Yagi,
The dielectric properties such as dielectric permittiv-
Y. Sato and Y. Shigesato: Development of a High Speed
ity and tangent loss are related to the physical proper-
Laser Flash System to Measure Thermophysical
ties determined by the domain structure and the
Property of Thin Films – Nanosecond Optical Pulse
mobility of the domain walls as well as ionic polar-
Heating Thermoreflectance Method, Proc. 25th Jpn. ization. Additionally, a hysteresis behavior observed
Symp. Thermophys. Prop., 2004, Nagano, pp. 240–242. for the polarization as a function of electric field is a
[13] T. Baba: Introduction of a response function method nonlinear phenomenon induced by the switching of
for analysis of functionally gradient materials, Jpn. J. the ferroelectric domains. Establishing ferroelectric
Thermophys. Prop., 7, 14–19 (1993). devices in the order of nanoscale and controlling the
[14] T. Baba, N. Taketoshi: Analysis of thermal diffusion in device performance require an advanced technology
that enables us to estimate local dielectric and ferro-
multi-layer thin films by a response function method,
electric properties.
Eurotherm 57 “Microscale Heat Transfer” (Edizioni
In this chapter, the ferroelectric domains and recent
Ets, 1998), pp. 285–292.
characterization technology of the local ferroelectric
[15] K. Ichihara, K. Todori, T. Nakai, K. Yusu, S. Ashida,
properties are briefly explained. At first, the general
S. Tatsuta, N. Taketoshi and T. Baba: Proceedings of information on dielectric permittivity and piezoelectric
First International Symposium on Standard Materials constant in perovskite-type ferroelectrics are provided,
and Metrology for Nanotechnology (SMAM-1) and then the domain structures of lead titanate
(2004), Tokyo. (PbTiO ) crystals are shown to be visualized on the
3
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