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7 FORMATION OF THICK ELECTRONIC CERAMIC FILMS                                 APPLICATIONS

                                                                      0.4
                                                                      0.2 0
                                                                   Faraday rotation   F  (deg/Hm)  -0.4
                                                                     -0.2

                                                                     -0.6
                                                    1 μm             -0.8                 before anneal
                                                                      -1
                                                                                          700 °C 60 min annealed
                                                                     -1.4
                  Figure 7.2                                         -1.2
                  Cross-sectional image of the AD-formed thick Bi:YIG film.  -1.6
                                                                       400    500   600    700   800   900
                                                                                   Wavelength   (nm)
                                                                 Figure 7.4
                                                                 Wavelength spectra of magneto-optical Faraday rotation
                                                                 angles of the AD-formed thick Bi:YIG films before and
                                                                 after the post annealing.
                                                      5 mm
                                                                 phases was always a problem, because the difference
                                                                 easily led to the formation of undesired phases and
                                                                 the resultant film normally showed poor ferromag-
                                                                 netic and ferroelectric properties.
                                   15 mm
                                                                  ADM inherently has no such problem because of
                                                                 the use of crystalline particles whose crystallographic
                  Figure 7.3
                  Surface photograph of the AD-formed thick Bi:YIG film.  structures are the same as those of the objective films.
                  The word “YIG” which was placed behind the film is seen.  In this respect, the authors fabricated a Bi:YIG/PZT
                                                                 composite thick film with ADM. Fig. 7.5 shows the
                                                                 X-ray diffraction chart of thus obtained films, indi-
                                                                 cating clear coexistence of Bi:YIG and PZT per-
                    To obtain thick magnetic garnet films, Bi-substituted
                  YIG (Bi Y Fe O ; Bi:YIG) films were formed by  ovskite phases.  The film was identified as
                                                                 ferromagnetic through VSM measurements where the
                                 12
                         0.5
                            2.5
                               5
                  ADM with crystalline Bi:YIG fine particles whose  saturation magnetization of film was similar to that of
                  average diameter was approximately 500 nm.  As  Bi:YIG single film.  At the moment, ferroelectric
                  shown in Fig. 7.2,  ADM enabled us to form thick  properties of film have been studied in detail. If the
                  Bi:YIG film with considerably high density. The as-  ferromagnetism and ferroelectricity are both main-
                  deposited film was transparent as seen in Fig. 7.3. In  tained at room temperature, strong coupling between
                  this case, the film deposition rate was more than  the magnetization and electric polarization is also
                  1  m/min, which is very fast and satisfactory for prac-  expected.  This kind of thick multiferroic films are
                  tical applications, although the crystallographic struc-  very attractive because the magnetization (electric
                  ture of thus obtained films was found to be deteriorated  polarization) of the film can be controlled by the
                  from that of the starting Bi:YIG fine particles, mainly  application of electric (magnetic) field.
                  due to the introduction of strains through the impact of
                  fine particles. Favorably, such strains could be released
                  and crystallographic structure was recovered after post  3. Applications of AD ceramic films
                  annealing. As a result, the post-annealed Bi:YIG film
                  showed magneto-optical responses similar to those of  (1) Magneto-optic spatial light modulators
                  sputtered films (Fig. 7.4).                    A novel type of magneto-optic spatial light modulators
                                                                 (MOSLM) are now under investigation by utilizing
                  (2) Multiferroic ceramic thick films           thick AD PZT films. SLMs are optical micro-devices
                  ADM enables us to form thick ceramic films at a rel-  for modulating amplitude or phase of traveling optical
                  atively low temperature. This leads to a natural con-  waves, and are now widely used in projectors, for
                  sequence that the technique will be useful for  instance. Recently, associated with the developments of
                  obtaining composite multiferroic ceramic films, mix-  holographic memory, SLMs with faster operation speed
                  ture of ferromagnetic and ferroelectric materials. To  are required for ensuring the high data transfer speed of
                  obtain such a composite film, difference in formation  the memory. To meet the requirements, the authors have
                  temperatures of the ferromagnetic and ferroelectric  been developing the MOSLM, where optical wave is

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