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APPLICATIONS                                          7 FORMATION OF THICK ELECTRONIC CERAMIC FILMS


                                                                                    G
                                                                                   YIG
                                                                                   YI
                                                                                   PZT
                                                                                   PZT
                                              n
                                               eal
                                                 ed
                                            Annealed
                                            A
                                             n
                                  Intensity (A.U.) Intensity (A.U.)  A s-fo r med
                                                 °
                                                 C

                                            at 500
                                            at 500 °C
                                         As-formed
                                          Powder
                                          Po wd er
                                   20         25         30         35         40         45
                                   20
                                                                                          45
                                              25
                                                         30
                                                                               40
                                                                    35


                                                            2 2  (deg)
                                                                g)
                                                              (de
                  Figure 7.5
                  XRD patterns of Bi:YIG, starting powder, as-formed and after annealing.
                  modulated via MO effect corresponding to the direction
                  of magnetization. The switching of magnetization takes        AD-formed PZT
                  place within several nanoseconds, and hence the                          Magnetic garnet
                  MOSLM is essentially very fast.
                    Normally, magnetization direction is controlled
                  by a magnetic field produced by currents. This is,
                  however, always associated with a heat problem,
                  and alternative method for controlling the direction
                  of magnetization in MOSLM is needed instead of               SGGG
                  the current drive. To solve this problem, piezoelec-
                  tric film was employed for applying stresses to
                  designated magnetic pixels. Because of the inverse  Figure 7.6
                  magnetostriction, the applied stresses are equivalent  Fundamental configuration of MOSLM in which the
                  to effective magnetic field, which attributes to the  magnetization in pixel is switched by applying a voltage to
                  control of magnetization. Based upon this consider-  the AD-formed PZT film.
                  ation, the authors constructed a MOSLM with the
                  AD PZT film, as shown in Fig. 7.6. The device was
                  tested by applying a voltage to the PZT film for
                  controlling the direction of magnetization (Fig. 7.7).
                  In fact, magnetizations in the voltage-applied pix-  for such waveguides.  As shown in Fig. 7.8, good
                  els switched and the contrast of these pixels was  PLZT thick films showing low optical absorption at
                  clearly changed. To our knowledge, this is the first  1.5 m wavelength of light were obtained by control-
                  MOSLM that is driven by piezoelectricity or    ling the preparation conditions during the aerosol
                  voltage.                                       deposition. Fig. 7.9 is a cross-sectional image of the
                                                                 optical waveguide composed of thus obtained PLZT
                  (2) PLZT multimode optical waveguides          film. As seen in the figure, dense and thick PLZT
                  To realize recent network design such as “fiber to the  optical waveguide has been formed. By utilizing this
                  home (FTTH)”, low-price and small optical switches  waveguide, the optical cross-connect system is now
                  are desired for consumer use. To meet this require-  being developed.
                  ment, a novel optical cross-connect system is now  The work was supported in part by NEDO nano-
                  under development by combining holographic optical  level electronic ceramics low temperature formation
                  filter and optical speckle pattern modulation. In this  and integration project and MEXT novel technology
                  system, optical waves are controlled in multimode  development project. The author expresses his sincere
                  optical waveguides possessing the electro-optic (EO)  thanks to Hosokawa Micron Corp. which supplied the
                  effect, and AD-formed PLZT thick films were used  Bi:YIG fine particles for the project.

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