Page 186 - Organic Electronics in Sensors and Biotechnology
P. 186

Integrated Pyr oelectric Sensors     163

                                                              3
                   To obtain an on-to-off output current ratio above 10  for the inte-
               grated organic pyroelectric thin-film sensors, an OTFT with a sub-
               threshold swing around 0.1 V/decade and an onset voltage around 1 V
               is needed. The results reported in the beginning of this section on the
               integrated optothermal device clearly meet the aforementioned spec-
               ifications.

               Abbreviations and Acronyms

                   CPE     constant phase element
                   DUT     device under test
                   EC      equivalent circuit
                   (O)FET (organic) fi eld-effect transistor
                   IS      impedance spectrum
                   MIS     metal-insulator semiconductor
                   MPP     N, N′-Dimethyl-3,4,:9,10-perylenbis(carboximid)
                   OLED    organic light-emitting diode
                   OPD     organic photo diode
                   PVP     polyvinylphenol



          Acknowledgment
               This work was supported by the European Commission under Con-
               tract No. 215036 as a specific targeted research project with the acro-
               nym 3PLAST.


          References
                 1.  L. Young, “Anodic Oxide Films,” Trans. Faraday Soc., vol. 51, 1955, pp. 253–267.
                 2.  U. Rammelt and C. A. Schiller, “Impedance Studies of Layers with a Vertical
                  Decay of Conductivity or Permittivity,” ACH—Models in Chemistry, vol. 137,
                  2000, pp. 199–212.
                3.  M. Shur, Physics of Semiconductor Devices, Prentice-Hall, Upper Saddle River,
                  N.J., 1990.
                 4.  S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1982.
                 5.  H. Schoen, “Charakterisierung organischer MIS-Strukturen durch gleichspan-
                  nungsabhängige Impedanzspektroskopie,“ Thesis, TU-Graz, October 2006.
                 6.  S. B. Lang, Physics Today, August 2005.
                 7.  A. J. P. Martin, Proc. Phys. Soc., 53:186 (1941).
                 8.  J. B. Bergmann, J. H. McFee, and G. R. Crane, Appl. Phys. Lett., 8:203 (1971).
                 9.  A. M. Glass, J. H. McFee, and J. B. Bergmann, Jr., J. Appl. Phys., 42:5219 (1971).
               10. E. Yamaka, Natl. Tech. Re., 18:141 (1972).
               11.  J. B. Bergmann, Jr., and G. R. Crane, Appl. Phys. Lett., 21:497 (1972).
               12.  S. Bauer and S. B. Lang, IEEE Trans. Diel. El. Ins., 3:647 (1996).
               13. H. Meixner, Ferroelectrics, 115:279 (1991).
               14.  S. Webster and T. D. Binnie, Sensors and Actuators, A49:61 (1995).
               15.  P. C. D. Hobbs, Proc. SPIE, 4563:42 (2001).
   181   182   183   184   185   186   187   188   189   190   191