Page 435 - Organic Electronics in Sensors and Biotechnology

412 Inde x

FGMs (functionally graded materials), H H
375 H S (see hydrogen sulfide)
2
field-dependent mobility model, 14–20 heme oxygenase enzymes, 52
field-effect mobility heterojunction OPV devices,
and channel length, 16–17 202–208
for OTFTs, 58, 95 highest occupied molecular orbital
temperature dependence of, 15 (HOMO), 4, 5
field-effect transistors (FETs) hot embossing process, 276
with chemically sensing gates, 26 humidity sensors, 110
MIS structure of, 120–123 hydrazine sensors, 183
films, 363 (See also thick films; thin films) hydrogen sulfide (H S), 51, 54, 55
flash memory, 311 2
flexible substrates, 245, 246, 248
flocculation by particle accumulation I I
(EPD), 367 ideal MIS structure, 120
fluorescence measurements, 282 IGFETs (insulated gate FETs), 26–27
fluorescence resonance energy transfer immunoassays, 254–255
(FRET), 336 impact ionization coefficients, 197
fluorescence-based detection, 256–257 impedance, 118
foodborne pathogen sensors, 181–182 impedance spectroscopy, 117–127
Förster resonance energy transfer, 269 basics of, 117–120
Fowler-Nordheim tunneling, 23–24 charge-time behavior of capacitive
Frenkel-Poole relationship, 18–20 multilayers, 123–127
FRET (fluorescence resonance energy IS of organic MIS structures, 120–123
transfer), 336 impedance spectrum (IS), 117
“front detection” mode (OLEDs), 167–169 and constant phase elements,
Full Width at Half Maximum 118–120
(FWHM), 79 of different ECs, 117
functional organic materials, 300–311 of organic MIS structures, 120–123
DNA, 306–309 imprinting plastics, 276–277
electroactive polymers, 309–311 indium tin oxide (ITO), 208, 381, 385
organic semiconductors, 300–306 infrared sensors, 128, 129
functionally graded materials (FGMs), inkjet technique, 363
375 inorganic materials, for EPD,
FWHM (Full Width at Half 374–376
Maximum), 79 inorganic substance monitoring
anthracene-based OTFTs, 59–75
G G gold nanoparticle-modified FET
gain, 241–243 sensors for, 75–85
gait analysis, 114, 115 OTFTs for, 51–55
gas sensing measurements, 71–75 input noise current, 229
gate dielectrics, 309, 314–315 input noise voltage, 229
gate field-induced sensitivity insulated gate FETs (IGFETs), 26–27
enhancement, 59 integrated light sources, 255–256
gate voltage, 94 integrated optical sensor systems,
gate-induced charges, 5 280–293
GIXRD analysis, 69–71 organic lasers in, 286–293
glucose sensing, 177–181 sensing schemes for, 280–286
gold nanoparticle-modified FET integrated pyroelectric sensors,
sensors (Au-NPs), 75–85 128–163
grain boundaries pyroelectric polymer materials,
disorder at, 5 131–135
and scale of devices, 29–30 pyroelectricity, 130–131
and scaling behavior of sensing pyroelectrics and ferroelectrics,
response, 35–40 129–130
trapping at, 27–29 sensor part, described, 135–163
guest-host material, 269 transistor part, described, 153–163