Page 437 - Organic Electronics in Sensors and Biotechnology

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MIS (metal-insulator-semiconductor) NOS (NO synthases), 53
structure, 120–123 NO (see nitrogen dioxide)
x
misfolded proteins, 339 (See also NO sensors, 75–85
x
protein aggregation diseases) NP-based gas sensors (see
molecular computers, 363 nanoparticle-based gas sensors)
MOSs (Metal Oxide Semiconductors), n-type semiconductors, 2–3, 303–304
56
motion sensors, angle-selective, 129 O O
μTAS (micro total analysis system), OFET sensors (see organic field-effect
280 transistor sensors)
multianalyte sensing, OLED-based OFETs (see organic field-effect
platform for, 176, 177–181 transistors)
multiple trapping and release model, OLED-based sensors (see organic light-
5, 12 emitting diode-based sensors)
multiwalled CNTs (MWCNTs), 377, OLEDs (see organic light-emitting
379, 386 diodes)
MXDX (poly[m-xylylene adipamide]), oligomeric structures, 62
311 one-dimensional heat distribution
model, 141–150
N N experimental vs. modeled results,
nanoimprint lithography, 21 143–144
nanoparticle (NP)-based gas sensors, impedance and capacitance of
75–85 measurement circuit, 147–150
advantages of, 76 pyroelectric layer comparisons,
nanostructured active layers 147, 148
features, 78–82 sensor area and voltage response,
new materials for, 77–78 144–145
operating temperature and substrate comparisons, 145–147
performance of, 83–85 on/off ratio, for OTFTs, 58, 95, 159
overview of, 75–77 OPDs (see organic photodiodes)
study results and perspectives, open-circuit photovoltage, 208, 212–215
83–85 optical pumping, 269, 270
nanoscale organic transistors optical sensors
characterization of, 5–7 for data communications, 194, 195
charge transport in, 21–25 LCPs as, 334–339
sensing response in larger devices organic semiconductor lasers for,
vs., 29–37 280–293
width-to-length ratio for, 6 for sensing, 194, 195
nanostructured conducting polymers, (See also organic photodiodes;
384, 385, 388 photodetectors)
NEP (noise equivalent power), 225 OPTs (organic phototransistors), 202
neurodegenerative conditions, 342 OPV devices (see organic photovoltaic
nitrogen dioxide (NO , NO ), 51, 53, 55 devices)
2 x
nitrogen dioxide (NO , NO ) sensors, organic electronics, 362–363
2 x
75–85 and classic MOSFETs, 1–2
nitrogen oxide (NO), 51, 53, 55 cost and flexibility of, 2
NO synthases (NOS), 53 performance improvement
NO (see nitrogen dioxide) initiatives in, 362
2
NO sensors, 75–85 organic field-effect transistor (OFET)
2
noise sensors, 26–27, 93–115
in avalanche photodiodes, 197–198 for artificial sense of touch, 107–110
in charge-coupled devices, 200 e-textiles, 110–115
in organic photodiodes, 221–225 for large-area applications, 93, 94
noise analysis, 258–260 printed active matrix for, 97–98
noise equivalent power (NEP), 225 for strain and pressure, 96–107
nonvolatile flash memory, 311 working principles of, 94–95