Page 438 - Organic Electronics in Sensors and Biotechnology

Index 415

organic field-effect transistors (OFETs), 2 organic photovoltaic (OPV) devices,
bias stress effect in, 31 201–202
DC characteristics and channel architectures for, 202–204
lengths of, 10–12 current-voltage characteristics for,
fabrication of, 9 208–215
gate-induced charges in, 5 equivalent circuit for, 215–217
materials for, 2, 3 fabrication of, 204–208, 245–247
nanoscale, 6–7 organic semiconductor lasers, 265–293
performance factors for, 5–6 distributed feedback resonators,
organic laser diodes, 270 266–269
organic light-emitting diode (OLED)- energy transfer systems, 269
based sensors, 165–188 fabrication of, 270–280
based on oxygen monitoring, 169–182 for integrated optical sensor
benefits of and issues with, 182–184 systems, 280–293
OLED/sensing component optical pumping, 269, 270
integration, 168–169 prospects for organic laser diodes, 270
OLED/sensing component/ organic semiconductors, 300–306
photodetector integration, ambipolar, 304–306
184–186 n-type, 303–304
organic light-emitting diodes (OLEDs), p-type, 301–303
255–256 (See also organic organic thin-film transistors (OTFTs),
semiconductor lasers) 51–85
organic materials, 362 with A1 O , 157–158
2 3
advantages of, 93, 362 anthracene-based, 59–75
classes of, 362 for biological sensing, 56–59
drawbacks of, 93 charge transport in, 21–25, 43–45
for EPD, 376–382 for chemical sensing, 26, 27, 56–59
functional, 300–311 chemical sensing responses of, 40–43
for OFETs, 2–3 for diagnostic breath analysis, 55
for strain and pressure sensors, 96–101 field-dependent mobility model for,
organic MIS structures, 120–123 14–20
organic photocells, EPD for, 384 gold nanoparticle-modified FET
organic photodetectors, 293 sensors for NO detection, 75–85
x
organic photodiodes (OPDs), 193–258 impedance-transforming elements
architectures for, 202–204 in, 153–154
capacitance of, 234–237 as inorganic analyte sensors, 59–75
conventional photodetectors vs., for inorganic substance monitoring,
195–202 51–55
current-voltage characteristics for, low-voltage, 154–158
208–215 micro-sized, 27–28
for diagnostics, 253–258 overview of, 55–59
equivalent circuit for, 215–217 performances of, 95
fabrication of, 204–208 for pyroelectric sensors (see
gain in, 241–243 integrated pyroelectric sensors)
intrinsic noise characteristics, 221–225 receptor-modified, 43
measuring current, 225–234 structure of, 94–95
noise analysis, 258–260 temperatures and electrical
in organic laser-based systems, 293 characteristics of, 7–14
for printed and flexible devices, organic transistor-based chemical
244–247 sensors, 25–43
real time and cutoff frequency, scaling behavior of sensing
218–221 response, 35–40
shunt resistance of, 237–239 sensing response and function of
spectral response of, 217–218, 239–241 receptors, 40–43
for X-ray imaging, 247–253 sensing response transition from
organic phototransistors (OPTs), 202 micron-scale to nanoscale, 29–37
vapor sensing behavior of, 27–29