Page 440 - Organic Electronics in Sensors and Biotechnology
P. 440

Index    417

               poly(vinylidene fluoride) (PVDF),   printed organic FET active matrix,
                   128–132, 138–139              97–98
               poly(vinylidene fluoride-     printing, 244–247
                   trifluoroethylene) (P[Vdf-TrFE]),   prion diseases, 342–343, 351–353
                   311                       protein aggregation, 339–341
               poly(vinyl phenol), 310       protein aggregation diseases, 341–343
               poly(3-alkylthiophenes) (P3AT)-based   (See also amyloid fibrils)
                   surface switches, 396–397  proton oscillations, electronic control
               poly(3-hexylthiophene) (P3HT)     of, 402–403
                   transistors, 40–43        PSS, 402 (See also PEDOT:PSS)
               polyaniline (PANI) colloids, 379–380,   PTAA, 345–346, 349–350, 353
                   385, 388, 397–398         PTAA FET devices, 74
               polycyclic aromatic hydrocarbons   P(VDF-TrFE) thin films, 132–135
                   (PAHs), 60                P3AT (Poly[3-alkylthiophenes])-based
               polyetheretherketone (PEEK), 380–381  surface switches, 396–397
               polyimides, 310               P3HT (Poly[3-hexylthiophene])
               polymer electrolytes, 311         transistors, 40–43
               polymer OLEDs (PLEDs), 166    P3HT:PCBM system, 208, 218, 246,
               polymer thin films, 363           247, 251
               polymeric field-effect transistors,   p-type MOS devices, 56
                   26–27                     p-type semiconductors, 2, 60, 301–303
               polymers, 362–363             PVA (poly[vinyl alcohol]), 310
                 applications of, 362–363    PVDF (see poly[vinylidene fluoride])
                 backbone of, 362            pyroelectric coefficient, 130
                 conjugated (see conjugated   pyroelectric polymer materials, 128–129,
                    polymers)                    131–135
                 electroactive, 309–311      pyroelectric response
                 EPD of, 379–382, 387–389      measuring, 135–136
                 pyroelectric, 128–129, 131–135 (See  modeling, 141–153
                    also integrated pyroelectric   phenomenology of, 137–141
                    sensors)                   poling, 136–137
                 solution-processable, 206–207,   pyroelectric sensors (see integrated
                    301–302                      pyroelectric sensors)
                 (See also conductive polymers)  pyroelectricity, 128–131
               polypyrrole (PPy)-based surface   pyroelectrics, 129–130
                   switches, 398–399
               polystyrene latex particles, 381    Q Q
               polythiophenes, 62, 207, 208, 332  quenching, 336
               PONT, 347–350
               POPT chemiresistor sensors, 74      R R
               potential determining ions (PDIs),   resistors, thermal noise of, 258–259
                   367–368                   resonant detection methods, 284–285
               POWT, 332–334, 337–339        rise time (OPDs), 218–221
               PPSs (passive pixel sensors), 253  robots, artificial skin for, 107–110
               PPVs (poly[phenylene-vinylene]s),
                   207–208                         S S
               PPy (polypyrrole)-based surface   sacrificial anode electrolysis (SAE), 78
                   switches, 398–399         SAM (see self-assembled monolayer)
               pressure sensors              saturation polarization, 133
                 for artificial sense of touch, 107–110  scaling behavior, 43–45
                 for e-textiles, 110–115       in chemical-sensing organic
                 large-area, 96–97, 323, 325      transistors, 25–43
                 single-element, 320           field dependent mobility model for,
                 state of the art organic materials for,   14–20
                    96–101                     in organic transistors, 1–25
                 substrate-free OTFTs for, 102–107  sub-10-nm, charge transport in, 21–25
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