Page 14 - Photodetection and Measurement - Maximizing Performance in Optical Systems
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Photodetection Basics

                                                                          Photodetection Basics  7


                                                      .        mA mW                       (1.3)
                                               r ideal = 0 807l mm
                       Hence, for a fixed incident power, the limiting performance of our detection
                       systems is usually better at a longer wavelength. At longer wavelengths you
                       simply have more photons arriving in the measurement period than at shorter
                       wavelengths. This also explains why optical communication systems seem
                       always to need microwatts of optical power, while your FM radio receiver
                       operating at about 100MHz gives a respectable signal-to-noise ratio for a few
                       femtowatts (say, 1mV in a 75-W antenna). In each joule of radio photons there
                       are five million times more photons than in a visible optical joule. We will return
                       to this important point in Chap. 5, when dealing with detection noise.
                         The quantity r(l) is usually given in the photodetector manufacturers’ liter-
                       ature. Figure 1.5 shows typical curves for some real photodiodes. The straight
                       line is the ideal 0.807l mm result for a detector with 100 percent quantum effi-
                       ciency, and it can be seen that the responsivity of real silicon diodes typically
                       approaches within about 30 percent of the ideal from about 0.4mm to 1mm. The
                       ratio of actual responsivity to ideal responsivity is called the quantum efficiency
                       (h):

                                                           r  l ()
                                                      h =                                  (1.4)
                                                          r ideal  l ()
                       Departures from the 0.807l mm unit quantum efficiency straight line for silicon
                       diodes seen in Fig. 1.5 occur as a result of several effects. The rapid fall-off in
                       sensitivity at wavelengths above approximately  l g ª 1.1mm wavelength for
                       silicon is caused by the increasing transparency of the silicon crystal at those
                       wavelengths. Photons with energy less than the material bandgap energy E g

                          1.2
                          1.1
                                                        InGaAs
                          1.0      100% Quantum         (std.)   InGaAs
                         Responsivity (A/W)  0.8  Efficiency Si  Ge  (long)
                          0.9
                          0.7
                          0.6
                          0.5
                          0.4
                          0.3
                          0.2
                          0.1
                                    GaP   GaAsP
                          0.0
                             0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
                                              Wavelength (mm)
                       Figure 1.5 Photodiodes of different semiconductor materials show sensitiv-
                       ity in different wavelength regions, limited at long wavelength by their
                       energy gap. 100 percent quantum efficiency means that one photon produces
                       one hole-electron pair.
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