Page 22 - Photodetection and Measurement - Maximizing Performance in Optical Systems
P. 22

Photodetection Basics

                                                                         Photodetection Basics  15

                       2nd Quadrant                         1st Quadrant
                                            Current


                                                  Dark
                                                          Forward bias
                       Saturation
                       Current I s
                                                            Voltage


                                                           V oc
                                                              +
                                                              - V oc
                                                        Max
                                   Increasing           power
                                   Light           I sc  Solar cells
                            Breakdown  Reverse bias  I sc
                                   Level



                           3rd Quadrant                     4th Quadrant
                       Figure 1.9 Four-quadrant current/voltage characteristic. With-
                       out illumination this is similar to a conventional diode. Increas-
                       ing illumination shifts the characteristic in the negative current
                       direction. Detection is possible in quadrants 1, 3, and 4.



                         In the fourth quadrant we can extract power from the detector. This is the
                       region where solar cells are designed to work. For best efficiency we should
                       define the operating point through choice of the load resistance to maximize
                       the VI product. At this point it is possible to extract roughly 80 percent of the
                       I SCV OC product. Solar cells are pn-junction devices, usually designed with higher
                       doping levels than pin-photodetectors to keep series resistance low and to max-
                       imize the absorption of light at the short wavelength end of the silicon
                       absorbance spectrum. This is to best match the spectrum of sunlight. Although
                       solar cells are rarely considered as detectors for instrumentation, their low
                       cost/area can make them very attractive as such.



           1.7.5 Parasitic capacitance
                       Let’s look now at the other elements of our equivalent circuit of Fig. 1.7. The
                       parasitic capacitance which appears as if across the photodiode is C p. Its origin
                       lies in the positive and negative space charges separated by the depletion region
                       of Fig. 1.2, which act like a parallel plate capacitor. Although the diode area
                       is rather small compared with a component capacitor, the thinness of the
                       depletion region can lead to high capacitance values. It increases approximately
                       linearly with the detector area and decreases with increasing reverse bias.
                       Measurement of the junction capacitance as a function of reverse voltage can
                                                                     2
                       tell us the device’s doping profile. A plot of 1/C versus voltage can provide
                   Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
                              Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
                               Any use is subject to the Terms of Use as given at the website.
   17   18   19   20   21   22   23   24   25   26   27