Page 140 - Power Electronics Handbook
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Overcurrent protection   133


                               Power semiconductor
                                 Circuit breaker
                                   Fuse will protect
                                 1 this point
                                   to


                                I
                                I
                                I
                                1
                             751100 ms    Time
                   Mlprr 5.11 Characteristics of several protective devices


                   asymmetrical current by  increasing circuit reactances. It  is important to
                   ensure that the fault current reaches a sufficient value to blow the fuse
                   within  a  relatively  short  time,  or  the  power  semiconductor  may  be
                   damaged. This is illustrated in Figure 5.11, where it is seen that for stiff
                   supplies a fast-acting semiconductor fuse will protect a power semiconduc-
                   tor, whereas for soft supplies circuit breakers must be used.
                     The performance of  a fuse can be  improved by  connecting several of
                   them in parallel, the total steady state current being given by  equation (5.3)
                   where N is the number of fuses in parallel and F is a factor which accounts
                   for fuse mismatch, being typically 0.9.

                     itotal  = ionefus  X  N X  F                              (5 * 3)
                     The i2t rating of  the combination is given by  equation (5.4).
                     (i2t)total  = (i2t)onehse  x N2                           (5.4)

                   Therefore if  two fuses are connected in parallel each is required to have
                   about half the steady state rating of one fuse, but the i2t rating is improved
                   by  a factor of  four. Fuses can be connected in parallel by  having several
                   elements in parallel within a single case.
                     As mentioned in section 5.2, rapid rates of current increase (dildt) cause
                   failure in power semiconductors. This current increase is due to low source
                   impedances during a short circuit, or to discharge of suppression capacitors
                   or recovery currents  of  other devices, as in Figure 1.9. Inductances may be
                   added in  the lines to limit the rate of  rise of  current within the power
                   semiconductor, the inductors being air cored and therefore linear, or a
                   saturable reactor may  be used.
                     Fuses are not effective in protecting power transistors, since these may
                   come out of saturation as the fault current through them increases, due to
                   insufficient base drive. This would limit the current, preventing the fuse
                   from blowing quickly, whilst  causing high  dissipation across the  power
                   transistor, leading to failure. In these instances current sensing is used, the
                   base  drive being removed to  turn off the transistor, or else a  crowbar
                   device, such as a thyristor, is fired to blow a line fuse, as shown in  the
                   simple circuit of  Figure 5.7.
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