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REFERENCES
[1] R. P. Feynman, “There’s plenty of room at the bottom,” J. Microelectromech. Syst., vol. 2,
Mar. 1992, pp. 60-66.
[2] G.E. Moore, “Cramming more components onto integrated circuits,” Electronics,
vol. 38, Number 8, April 19, 1965.
[3] L. Esaki, “New phenomenon in narrow Germanium pn-junctions,” Phys. Rev., vol.
109, 1957, pp. 603-604.
[4] T. A. Fulton and G. J. Dolan, “Observation of single-electron charging effects in
small tunnel junctions,” Phys. Rev. Lett., vol. 59, 1987, pp.109–112.
[5] L.L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double-
barriers,” Appl. Phys. Lett., vol. 24, 1974, p. 593.
[6] B J van Wees et al. “Quantised conductance of point contacts in a two dimensional
electron gas,” Phys. Rev. Lett. , vol. 60, 1988, pp. 848-850.
[7] Proc. Int. Symp. On Nanostructure Physics and Fabrication, College Station, TX,
March 13-15, M.A. Reed and W.P. Kirk, Editors., Academic Press, San Diego (1989).
[8] Proc. Int. Symp. On Nanostructure Physics and Fabrication, Santa Fe, NM, May 20-
24, 1991, W.P. Kirk and W.P. Kirk, Editors., Academic Press, San Diego (1992).
[9] H. Kroemer, Theory of a wide-gap emitter for transistors,” Proc. IRE, vol. 45, 1957, pp.
1535-1537.
[10] W.P. Dumke, J.M. Woodall and. V.L. Rideout, “GaAs-GaAlAs heterojunction
transistor for high frequency operation,” Solid State Electron., vol. 15, 1972, pp. 1339-
1344.
[11] P. M. Asbeck, D.L. Miller, W.C. Petersen, et al, “GaAs/GaAlAs heterojunction bipolar
transistors with cutoff frequencies above 10 GHz,” IEEE Electron Device Letts., vol.
EDL-3, 1982, pp. 366-368.
[12] S.L. Su, et al., “Double heterojunction AlGaAs/GaAs bipolar transistors by MBE with a
current gain of 1650,” IEEE Electron Device Letts., vol. EDL-4, 1983, pp. 130-132.
[13] R.J. Malik, J.R. Hayes, F. Capasso et al., “High-gain AlInAs/GaInAs transistors grown