Page 252 - Principles and Applications of NanoMEMS Physics

242

by molecular beam epitaxy,” IEEE Electron Device Letts., vol. EDL-4, 1982, pp. 366-
368.
[14] T. Miura, S. Hiyamizuk, T. Fujii et al., “A new field effect transistor woth selectively
doped GaAs/n-AlGaAs heterostructures,” Jpn. J. Appl. Phys, vol. 19, 1980, pp. L255-
L277.
[15] A. B. Frazier, A. B., R.O. Warrington, et al., “The Miniaturization Technologies: Past,
Present, and Future,” IEEE Trans. Ind. Electronics, vol. 42, 1995, p.423.
[16] G. Binnig and H. Rohrer, “Scanning tunneling microscopy,” Helvetica Physica Acta 55,
1982, pp. 726–735.
[17] P. J. F. Harris, Carbon Nanotubes and Related Structures. Cambridge Univ. Press,
Cambridge, U.K. (1999).
[18] H.J. De Los Santos, Introduction to Microelectromechanical (MEM) Microwave
Systems, Norwood, MA: Artech House (1999).
[19] H. B. G. Casimir, “On the attraction between two perfectly conducting plates,” Proc. K.
Ned.. Akad. Wet., vol. 51, 1948, pp. 793–799.
[20] P.W. Milonni, The Quantum Vacuum: An Introduction to Quantum Electrodynamics,
Academic Press: San Diego (1994).
[21] C. Itzykson and J.-B. Zuber, Quantum Field Theory (McGraw-Hill International
Editions: New York, N.Y. (1985).
[22] H.J. De Los Santos, “Nanoelectromechanical Quantum Circuits and Systems,” Proc.
IEEE, vol. 91, No. 11, November 2003, pp. 1907-1921.
[23] S.M. Sze, VLSI Technology, Editor, New York: McGraw-Hill (1983).
[24] Jaeger, R. C., Introduction to Microelectronics Fabrication, Volume V, Modular Series
on Solid State Devices, G.W. Neudeck and R.F. Pierret, Eds., Addison-Wesley (1988).
[25] Hiroshi Toshiyoshi, “Micro-Opto-Electro Mechanical Systems (MOEMS) and Their
Applications,” Short Course Notes.
[26] S. Wolf and R. N, Tauber, Silicon Processing for the VLSI Era: Process Technology,
Lattice Press (1986)
[27] H.J. De Los Santos, Introduction to Microelectromechanical (MEM) Microwave
Systems, Second Edition, Norwood, MA: Artech House (2004).
[28] C. Kittel, Introduction to Solid-State Physics, New York, NY: John Wiley & Sons, Inc.
(1986).
[29] K.R. Williams and R.S. Muller, “Etch Rates for Micromachining Processing,” JMEMS,
vol. 5, No. 4, Dec. 1996, pp. 256-269.
[30] G.T. A. Kovacs, N. I. Maluf, and K. E. Petersen, “Bulk Micromachining of Silicon,”
Proc. IEEE, vol. 86, No. 8, Aug. 1998, pp. 1536-1551.
[31] F. Laermer and A. Schlip, “Method of Anisotropically Etching Silicon,” Patent #
5501893, Issued: March 26, 1996, Assignee: Robert Boch GmbH, Stuttgart, Federal
Republic of Germany.
[32] F. Laermer, A. Schilp, K. Funk and M. Offenberg, “Bosch Deep Silicon Etching:
Improving Uniformity and Etch Rate for Advanced MEMS Applications,” 1999 IEEE
[33] K. A. Shaw, Z.L. Zhang and N.C. MacDonald, “SCREAM I: A single mask single-