Page 233 - Radiochemistry and nuclear chemistry
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Detection  and Measurement  Techniques             217




                                        NaI(TI) 4x4"_ ~.~

                  Q~

                  0
                       X
                                          ^
                                   '~-'---   .-  :  __.A_.:- : ........
                  o
                  o
                  Oo                    HPGe  2 2Z
                  0
                        i    !   i   i                                         i    i   )
                    0                   500                  1000                 1500
                                                 E(keV)
                        FIG.  8.15.  Energy spectrum of ~~  obtained  with scintillation  and  HPGe detectors.


               eqn.  FWHM  =  (n 2 + kEv)~h, where FWHM  is the full ~   width at half maximum,  n the
               noise line width,  k  =  2,  and E  "),-energy, all in eV units.  This  resolution is far superior to
               that  of  the  scintillation  detector,  as  is  seen  from  Figure  8.15.  On  the  other  hand,  the
               detection  efficiency  is usually  smaller.  However,  an  efficiency  higher  than  100%  of that
               obtained  with  a  3"  x  3"  NaI(TI)  scintillation  detector  for  1.33  MeV  "y-rays (which  is  the
               reference  for  Ge-detector  efficiency)  has  been  obtained  in  the  best  designs,  but  typical
               values  are  10 -  30 %.



               8.4.3.  Intrinsic detectors

                One reason for drifting lithium into silicon and germanium is the necessity to compensate
               some p-type (acceptor)  impurities normally l~resent in pure materials.  It is now possible to
               increase  the  purity  of  germanium  to  1:l0 b  (compared  to  earlier  1" 1011) Which  makes
               lithium-drifting  unnecessary.  In  addition,  these  intrinsic  germanium  detectors  make
               uninterrupted cooling less important;  it is not required when storing the crystals, but should
               be  used  when  measuring  in  order  to  improve  resolution  and  prevent  crystal  overheating.
               Depending on the type of dominating impurity, HPGe crystals can be of either n- or p-type.
               HPGe-detectors of p-type have usually a lower energy cutoff,  beginning at about  100 keV,
               caused by the detector capsule wall and insensitive entrance layer.  Commercially available
               p-type detectors have relative efficiencies of 10 -  100 %.  On the other hand n-type HPGe-
               detectors can be made with a very thin entrance layer and,  when fitted with a Be-window,
              have a low energy cutoff beginning at about 6 keV.  Relative efficiencies  for n-type HPGe
              detectors  are  in general  somewhat  less  than for p-type detectors,  i.e.  10 -  80%.  Intrinsic
              germanium detectors are to a large extent replacing the lithium-drifted germanium detectors
              because  of their greater handling  simplicity  at no higher cost or  loss of resolution.
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