Page 99 - The Art and Science of Analog Circuit Design
P. 99

Signal Conditioning in Oscilloscopes and the Spirit of Invention


                         the input drives the gate, source, and drain of the FET through an equal
                         change via the 20pF input capacitor and the gate-drain and gate-source
                         capacitances. Since all three terminals of the FET remain at the same
                         voltage, the FET is safe from overvoltage stress. Of course, the switches
                         must have very low capacitance in the open state, or capacitive voltage
                         division would allow the terminals of the FET to see differing voltages.
                         In ~ 100 mode, the floating FET will see 40V excursions (eight divisions
                         on the oscilloscope screen at 5V per division) as a matter of course. For
                         this reason the -1 protection diodes must be switched to a higher bias
                         voltage (±50V) when in the -r 10 and ^-100 modes. The switches that con-
                         trol the voltage on the protection diodes are not involved in the high-
                         frequency performance of the front-end and therefore can be
                          implemented with slow, high-voltage semiconductors.
                            Can we replace the switches in the drain and source with semiconduc-
                         tor devices? The answer is yes, as Figure 7-21 shows. The relays in the
                         drain and source have been replaced by PIN diodes. PIN diodes are made
                          with a p-type silicon layer (P), an intrinsic or undoped layer (I), and an
                          n-type layer (N). The intrinsic layer is relatively thick, giving the diode
                          high breakdown voltage and extremely low reverse-biased capacitance.
                          A representative packaged PIN diode has 100V reverse breakdown and
                          only O.OSpF junction capacitance. To turn the -f-1 path of Figure 7-21 on,
                          the switches are all set to their "-fl" positions. The PIN diodes are then
                         forward biased, the bipolar transistor is connected to the op amp, and the
             Figure 7-21.
          Using PIN diodes  FET is conducting. To turn the path off, the switches are set to their
            to eliminate the  "-r 10,100" positions, reverse-biasing the PIN diodes. Since these switches
              relays in the
                 ~1 path.

                                                -50V
                                                (•M0.100)
                        +5V _  fr- +50V
                        (-5-1)  / (-5-10,100)
                         20 pF
              Vin
                                                              To Multiplexor


                               V -50V
                                 (-=-10,100)


                                                                        Low Frequency Feedback
                                                                            from Op Amp






                                                    +50V
                                                   (-M0.100)

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