Page 83 - Wire Bonding in Microelectronics
P. 83

62     Cha pte r  T h ree


              would stretch rather than break and stop the bonding operation,
              often loosing the threading of the wire. However, large-diameter wire
              having high elongation is cut off by a specially designed bonding tool
              and bonded with an inverted V-shaped, parallel-grooved tool that
              limits deformation. Examples of bonded large-wire are given in
              Chap. 2. Thus, large-Al wire can be fully annealed, have very high
              elongations, and still be bonded, as shown in Chap. 2, Fig. 2-16. Most
              large-diameter Al wire is either specified as 99.99% Al, or a few may
              contain 0.5% Mg. However, 99.99% wires have been offered with
              ~50 ppm of Ni additive, which is intended to make them less subject
              to corrosion in plastic packages as discussed previously. These wires
              are reputed to withstand up to 700 h in a pressure cooker test (121°C,
              100% RH). This wire alloy is not offered in small diameters. Any pos-
              sible effect on Au-Al intermetallic compound formation has not been
              a problem since large wire is usually bonded to Ni on the package
              and Al pads on the device.


         3.6  Wire and Metallization Hardness
              The hardness values of wires and balls are often needed to assess the
              possibility of cratering and to match the hardness of metallization for
              best bonding.∗ Such data are scattered throughout the book and are
              collected together in the cratering section (Sec. 5.1) in Table 5-2 for con-
              venience. These data are often in different units and may not be directly
              converted, since, necessary information is often not published. Values
              of typical metallization hardness are not included in that table because
              they depend on heat treatment and any alloying agents. For instance,
              Al metallizations containing Cu can increase in nanohardness (UMH,
              or ultramicrohardness, see glossary) by up to a factor of 4 (1 to 4 GPa)
              as the concentration of Cu increases from 0 to 10% [3-7]. Another UMH
              test [3-8] found that pure Al films ranged from ~0.45 to 0.6 GPa. The
              2 to 4% Cu range (sometimes used in IC metallization) is about 2 GPa.
              This alloy is noted for age hardening, so its actual hardness will depend
              on heat treatment and age. Hardness measurements made on thin
              (∼1 µm) metallization require special UMH testers using very low
              forces (~0.2 g load) and cannot be performed without special knowl-
              edge and training. However, hardness measurements on wires and
              balls have been made with standard microhardness testers, typically
              using loads of ~1 to 4 g.
                 Two studies have measured the correlation between metalliza-
              tion hardness and bondability. Nabatian [3-9] (thick films and wedge
              bonding) and Klein [3-10] (IC metallization and ball bonding) found


              ∗There is also a hardness difference between as-made undeformed balls and
              bonded balls, with the latter being about 40% harder (Chap. 8, Table 8-3), but
              differences depend on the metal (e.g., Au, Cu).
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