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3. The Dark pen Junction Diode      15




                  Generally, the minimum semiconductor layer thickness to absorb light can be
                  expressed by

                                                      2
                                               D min                             (1.9)
                                                      a
                     This simple relation is of a very critical importance for solar cell design. As the
                  semiconductors are expensive, one should use the minimum quantity of to perform
                  the absorption function. In this scenario, one needs thicker crystalline Si-layers as it
                  has the lowest a. This is true for thin-film solar cells. For wafer-based conventional
                  solar cells, the minimum layer thickness is limited by the mechanical rigidity.




                  3. THE DARK PeN JUNCTION DIODE
                  The commercial solar cells are basically pen junction diode structures constructed
                  to receive the solar radiation. To understand the operating principles underlying the
                  solar cell, one has to study first the pen junction diode. Solar cells are made of
                  either homotype pen junctions, heterotype junctions, or even multi-junction.
                  The homotype is from the same material, whereas the heterotype is from two
                  different materials. The operating principles are the same. So, we confine ourselves
                  to the homo junctions. The solar cell in darkness is a pen diode, whose dark char-
                  acteristics set the limits for the illuminated characteristics. From the principle
                  point of view, an illuminated solar cell ¼ a short circuit cell under light þ adark
                  biased pendiode.


                  3.1 FORMATION OF A FIELD REGION IN A PeN JUNCTION
                  Apen junction is the metallurgical boundary between an n-type region and a p-type
                  region in a semiconductor as shown schematically in Fig. 1.13 [11].
                     It can be proved both experimentally and theoretically that a space charge region
                  is formed around the metallurgical junction while the remaining parts of the diode
                  remain neutral under no bias. This layer is formed because of immigration of holes
                  from the p-side to the n-side and the electrons from the n-side to the p-side around












                  FIGURE 1.13
                  The pen junction diode regions.
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