Page 139 - An Introduction to Microelectromechanical Systems Engineering
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118                     MEM Structures and Systems in Industrial and Automotive Applications


                                                                         Al conductor
                       Silicon dioxide
                                   Silicon substrate                     TaAl resistor
                       insulator
                               1. Grow oxide for insulator, sputter TaAl and Al, pattern Al and TaAl,
                                 pattern Al again to form resistor and conductive trace.
                                                                           SiC/SiN
                                                                           passivation


                                   2. PECVD silicon nitride and silicon carbide passivation,
                                     pattern to contact openings.
                          Au pad
                                                                          Ta for
                       Ta for                                             protection layer
                       adhesion layer
                                   3. Sputter tantalum and gold, pattern Ta and Au for pads,
                                     pattern Au again, leaving Ta over resistors.
                          Ni orifice plate
                        Polyimide adhesive/
                        ink barrier



                                4. Deposit and pattern polyimide, bond premade nickel orifice plate.
                 Figure 4.31  Fabrication process for Hewlett-Packard thermal inkjet head.



                 PECVD is performed at a sufficiently low temperature so as not to affect the metal
                 already on the wafer. The use of this bilayer passivation, in addition to providing the
                 appropriate thermal properties and needed chemical protection, reduces the inci-
                 dence of pinholes. The SiC/SiN layers are patterned to make openings over the bond
                 pads. Later generations of heads use an additional layer of tantalum, which is very
                 hard, over the SiC/SiN in the resistor area to protect the underlying areas from the
                 high cavitation pressure (up to 13 MPa) felt during bubble collapse, greatly length-
                 ening the lifetime [40]. The tantalum sputtering is followed by gold sputtering with-
                 out breaking vacuum. The Ta also acts as an adhesion layer for the Au. The Au and
                 Ta are patterned, so they only remain on the contact pads and resistor. The gold is
                 then etched off of the resistor, leaving it only on the bond pads. Next, polyimide is
                 spun on, partially cured, and patterned to leave a channel through which ink flows
                 to the resistor. The nickel orifice plate, which was separately fabricated using elec-
                 troforming or laser ablation, is aligned and bonded to the silicon structure by the
                 polyimide. Finally, the wafer is cut up to the final product size.
                    As the print resolution of HP thermal inkjet heads increased from 96 dpi in 1984
                 to 180 dpi to 300 dpi to 300 × 600 dpi in the mid 1990s, the number of heater resis-
                 tors increased from 12 to 30 to 50 to 104, respectively [36, 37, 40]. For the earlier
                 generations, there was one external contact pad to drive each resistor, plus several
                 common grounds. For any electronic device, one of the greatest areas of reliability
                 concern is where electrical contacts are made, and disposable inkjet heads are a par-
                 ticular concern because they are installed by the consumer. To improve reliability, as
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