Page 20 - Complete Wireless Design
P. 20

Wireless Essentials



                                                                              Wireless Essentials  19

                          The input of a common-emitter transistor has a low resistance because of its
                        forward bias, so any signal inserted into the base-emitter junction will be
                        across this low input resistance, thus causing the bipolar transistor to be cur-
                        rent controlled by both the DC bias and any external signal voltages. This is
                        shown in the BJT’s characteristic curves of Fig. 1.23. The input signal, such as
                        an RF or audio signal, will then add to or subtract from the DC bias voltage
                        that is across the transistor.
                          Before significant collector current can flow, the transistor’s emitter-base
                        barrier voltage V  of approximately 0.6 V (for silicon) must be overcome. This
                                        BE
                        task is performed by the base bias circuit. In a linear amplifier, the initial
                        transistor’s operating point is set by the bias circuits to be around 0.7 V in
                        order to allow any incoming signal to be able to swing above and below this
                        amount. The region of active amplification of a BJT is only about 0.2 V wide,
                        so any voltage between saturation (0.8 V) and cutoff (0.6 V) is the only range
                        that a semiconductor is capable of amplifying in a linear manner. Between
                        these two V   values of 0.6 and 0.8 V, the I , and thus the I , is controlled.
                                   BE                           B               C
                          A BJT can be thought of as a current-controlled resistance, with a tiny base
                        current controlling the transistor’s resistance, which influences the much larg-
                        er emitter-to-collector current. This collector current is then made to run
                        through a high load resistance, generating an amplified output voltage.
                          Some high-frequency power transistors may be internally impedance
                        matched to increase their normally very low input and output impedances (as
                        low as 0.5 ohm), while some metal-can transistors may be found with four
                        leads; with one lead attached to the metal can itself, which is then grounded
                        to provide an RF shield.
                          A few of the more common transistor specifications found in BJT data
                        sheets are:


























                         Figure 1.23 The characteristic curves for a bipolar transistor.


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