Page 24 - Complete Wireless Design

Wireless Essentials

Wireless Essentials 23

Figure 1.26 The internal
structure of an N-channel
depletion-mode MOSFET.

Figure 1.27 The characteristic curves of an N-channel depletion-mode
MOSFET.

Figure 1.28 A dual-gate MOSFET’s schematic
symbol.

positive voltage that is placed across the gate will produce a channel between
the device’s source and drain (Fig. 1.31). Thus, as electrons are pulled to the
gate, an N-channel is created within the P-type substrate. This action permits
electrons to flow steadily toward the positively charged drain, creating a con-
tinuous current flow.

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