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              Polymers, Photoresponsive                                                                   739

                 TABLE III Resist Thickness Required to Achieve  carbon platforms do not provide sufficient transparency,
                 an Optical Density of 0.4 for Three Classes of Resist  fluorinated analogs do show potential, as do siloxane-
                 Matrix Polymers 23
                                                                based materials. Etching resistance and adhesion of the
                                          Thickness to achieve  fluorinated materials to silicon substrates are concerns that
                 Materials platform          OD = 0.40          will need to be addressed. Interestingly, the Kunz study
                                                                demonstrated that the absorbance of many of the standard
                 Acrylic                     46–87 nm
                                                                photoacid generator materials that have been used for both
                 Phenolic                       48 nm
                                                                248- and 193-nm chemically amplified resists have either
                 Cycloolefin                     77 nm
                                                                similar or even lower absorbance at 157 nm than at the
                                                                longer wavelengths, 130  thus alleviating concerns regard-
                                                                ing the PAG component. An aspect of materials design
              imaging of 200 to ∼400 nm, respectively. 131  Thus, av-
                                                                that will be increasingly important at 157 nm is that of
              enues leading to decreased absorbance need to be identi-
                                                                resist outgassing, or rather, the level of volatile species
              fied and explored for this application. This said, commer-
                                                                evolving from the resist film during exposure. These may
              cially available phenolic-, acrylate-, and cycloolefin-based
                                                                include residual solvent, volatile resist components, or
              resins have been evaluated as “tool testing” resists where
                                                                by-products generated upon irradiation of the resist film.
              “thinness” is not an obstacle. However, even in this appli-
                                                                Clearly, the evolution of volatile species must be kept to a
              cation there is a need to suppress unwanted photochemical
                                                                minimum at 157 nm so that these products do not deposit
              processes such as crosslinking or outgassing. The former
                                                                onto critical lens surfaces, deleteriously affecting the lens
              leads to undesirable negative-tone behavior in a positive
                                                                transmission characteristics.
              resist, while the latter can lead to outgassing which can
                                                                  Several groups are beginning to explore materials al-
              deposit on the objective element of the exposure tool and                             133
                                                                ternatives for 157 nm applications. Willson  has uti-
              lead to tool downtime. Such design considerations are cru-
                                                                lized a “modular approach” in which chemical approaches
              cial for all 157-nm systems. Of particular concern is out-
                                                                to instilling necessary functionality into the 157-nm ma-
              gassing of silicon-containing volatiles which can lead to
                                                                terial is first tested in a model system. In this manner,
              irreversible damage and cannot be cleaned by irradiation
                                                                he and his colleagues have identified the hexafluoroiso-
              in the presence of oxygen as is the case for carbon-based  propyl group as an effective aqueous-base-solubilizing
              lens deposits. 132
                                                                moiety and have shown that it can be protected with
                A list of representative polymeric alternatives along
                                                                acid-labile alkyl acetal protecting groups while main-
              with their 157-nm absorbance characteristics was reported  taining 157-nm transparency. Building from the 193-nm
              byKunzetal. 130  andispresentedinTableIV.Whilehydro-
                                                                materials research that demonstrated the effectiveness of
                                                                alicyclic backbone polymers for providing etching resis-
              TABLE IV Survey of 157-nm Absorbance Characteristics of  tance,  Willson 133   also  showed  that  substitution  of  nor-
              Selected Polymeric Platforms
                                                                bornene with an electron-withdrawing group such as flu-
                                                 Film thickness  orine or even a carbonyl group may afford resins with
                                     Absorbance    (in nm for   sufficient 157-nm transparency. For instance, the par-
                    Polymer           (µm −1 )    an OD = 0.4)
                                                                tially  fluorinated  poly(norbornene)  shown  in  Fig.  25a
              Si-O Backbone                                     has an absorbance of only 1.7 AU/micron. Although
               Poly(hydrosilsequioxane)  0.06        6667       this absorbance is still too high for practical appli-
               Poly(dimethylsiloxane)  1.61          248        cations, it demonstrates substantial improvement over
               Poly(phenylsiloxane)    2.68          149        nonfluorinated analogs which can have absorbances as
              Carbon Backbone                                   high as 7 AU/micron, and it represents a promising
               Fluorocarbon,           0.70          571        starting point for the design of new materials. Ober
                 100% fluorinated                                et al. 134  have reported two design approaches to achiev-
               Hydrofluorocarbon,       1.34          298        ing 157-nm transparency. One system is based upon a
                 30% fluorinated                                 poly(trifluoromethylvinyl alcohol-co-vinyl alcohol) resin
               Partially esterified     2.60          154        protected with acid-labile THP protecting groups, while
                 hydrofluorocarbon,
                                                                in another approach they investigated the introduction
                 28% fluorinated
                                                                of hexafluoropropyl groups onto cyclized polyisoprene
               Poly(vinyl alcohol)     4.16           96
                                                                (Fig. 25b). The material described to date does not have
               Ethyl cellulose         5.03           80
                                                                good transparency at 157 nm, but it does exhibit a high T g
               Poly(methyl methacrylate)  5.69        70
                                                                        ◦
                                                                (120–170 C) and good etching resistance. It is anticipated
               Poly(norbornene)        6.10           66
                                                                that hydrogenation of the olefinic moiety will address the
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