Page 173 - High Power Laser Handbook
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142    Diode Lasers                                                                                                    High-Power Diode Laser Arrays     143


                      they suffer from poor beam quality. Although the beam quality in the
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                      fast axis (assuming no bar smile) is diffraction limited (M  < 1.2), the
                      beam quality in the slow axis is poor. For example, an industry stan-
                      dard of an 808-nm, 19-emitter bar with a 150-mm emitter width on a
                      500-mm pitch and a divergence angle of 6 degrees (90 percent power)
                              2
                      has an M  of about 800. The degradation of beam quality is attributed
                      to three factors: First is the large emitter width, which is needed to
                      deliver the high power per emitter. Second is the emitter count in the
                      diode laser bar. And third is the fill factor (30 percent, in this example).
                      The  emitter  widths  can  be  decreased  but  not  by  a  large  amount,
                      because in high-power laser bars, the goal is to maximize power per
                      emitter. As a result, the only two variables that can be optimized to
                      improve beam quality are the emitter count and the fill factor. A lower
                      emitter count and a lower fill factor laser bar improve the beam quality.
                      The  lower  fill  factor  assumes  that  the  nonemitting  areas  between
                      emitters are filled after slow-axis collimation in order to recover beam
                      quality. Another variable that is often used to improve beam quality
                      by reducing the slow-axis divergence is the cavity length—a longer
                      cavity length can reduce slow-axis divergence, while at the same time
                      increasing power per emitter.
                         Low fill-factor bars, with emitter counts in the range of 5 to 10 and
                      fill factors of about 10 percent with powers approaching 10 W per
                      emitter in CW mode, are emerging as the preferred architecture for
                      high-brightness applications. The low fill-factor bars aim to capture the
                      beam quality of a single emitter, while delivering the power of a laser
                      bar. For example, an 808-nm, 10 percent fill-factor bar with an emitter
                      width  of  100  mm  and  10  emitters  with  a  slow-axis  divergence  of
                                                            2
                      6 degrees (90 percent power) has a slow-axis M  of about 800. However,
                      after slow-axis collimation (i.e., filling of the nonemitting areas), the M
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                      value drops to 80, whereas the standard bar after slow-axis collimation
                             2
                      has an M  equal to 240. For the same power output, the brightness of a
                      low fill-factor bar is ~3 times higher than the standard bar.
                         Other techniques for improving beam quality and brightness are
                      described further in Sec. 6.6.

                      6.5.3  Wavelength Locking
                      High-power diode lasers are multimode lasers; therefore, their spec-
                      tral brightness is low. Although the centroid wavelength can be tuned
                      fairly accurately at any given temperature, the FWHM (full width half
                      maximum) is approximately 3 nm, and the FW 1/e  (full width at 1/e
                                                                               2
                                                                2
                      of the maximum) is approximately 5 nm. Furthermore, the wavelength–
                      temperature  coefficient  for  these  lasers  is  around  0.3  nm/°C.  For
                      some applications, this broad bandwidth and sensitivity to tempera-
                      ture create operational challenges. For example, pumping of standard
                      ytterbium (Yb) fiber lasers in the 980-nm pump region requires a nar-
                      row bandwidth, due to the narrow absorption band. In some specific
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