Page 322 - System on Package_ Miniaturization of the Entire System

296 Cha pte r F i v e

Range of
Name of Company or Values TCR
o
Organization Material Process Approach (Ω/sq) (ppm/ C)
Intarsia 10–100
Boeing Ta2N Sputter 20 (±100)
NTT 25–125 (–75 to
GE –100)
Osaka University
Metech Conductive Polymer thick-film Insulating
Acheson Colloids polymer process to
Electra composites Liquid phase sintering conducting
Ashai Chemical
W. R. Grace
DOW Corning
Raychem Corporation
Ormet Corporation
Ohmega Ply NiP alloy Electroplate 25–500
Inst. TaSi DC sputter 10–40
Microelectronics, 8–20
Singapore
University of CrSi Sputter –40
Arkansas/Sheldahl
W. L. Gore and TiW Sputter 2.4–3.2
Associates
Shipley Doped Pt Plasma enhanced Up to 1000 100
on Cu foil chemical vapor
deposition (PECVD)
Deutsche Aerospace NiCr Sputter 35–100
TICER Technologies NiCr 25–1000
NiCrAlSi
CrSiO3
Georgia Institute of NiWP 10–50 Near zero
Technology NiP Electroless plate 25–100
MacDermid
DuPont LaB6 Screen print and foil Up to ±200
transfer 10,000

TABLE 5.3 Current State-of-the-Art of Embedded Resistors