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32 Cha pte r O n e
1999
Embedded inductors 1999
(up to 22 nH) Gen 1 embedded resistors
(20% tolerance)
1999
Gen 1 embedded capacitors
2
(0.8 pF/mm )
2003
Gen 2 trimmed resistors
(1–3% tolerance)
2002
Gen 2 embedded capacitors 2006
2
(16.8 pF/mm ) Gen 3 embedded capacitors
2
(3000 pF/mm ; in scale-up)
FIGURE 1.31 SOP technology in production at Motorola. (Courtesy: Motorola)
Motorola has been a global leader in both the R&D and manufacturing
implementation of RF passives (Figure 1.31). Its first generation of RF capacitor passives
was used in its cell phones in the 1999 time frame. The second generation of passives
was improved for not only capacitance density but also for process tolerances around
2002. Ferroelectric thin film capacitors are under development in Motorola.
Intel has also reported a 43 percent reduction in the form factor along with increased
functionality in its wireless local area network (WLAN) solution (Figure 1.32)
@
2004: Intel @ pro wireless 2915 ABG 2006: Intel pro wireless 3945 ABG
network connection WLAN card network connection WLAN card
• 43% area redux
• Double-sided to single-
sided assembly
• Increased functionality
50 × 30 mm
9 × 9 mm leadframe (1500 sq mm)
(QFN1) transceiver Pkg
• Single row
• Increased
60 × 44 mm (2640 sq mm) functionality
@
2007: Intel wireless
WiFi link 4965AGN
card
10 × 10 mm leadframe
(QFN2) transceiver Pkg
• Dual row
FIGURE 1.32 SOP implementation in Intel’s WLAN and wireless WiFi link cards. [43]