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Wafer Cleaning and Surface Preparation 135



           efficiency and roughness increase. Decomposition of
           cleaning solutions and impurities can also catalyse sur-
           face reactions leading to increased roughness.



           12.2 WET CLEANING
           Acid, base and solvent wet cleanings are the main
           methods of cleaning. Dry cleaning by, for example,
           vapours and plasmas offers some advantages that will
           be discussed in Chapter 34. Wet cleaning is simple, it
           has high throughput and it cleans both the front and the
           back of the wafer simultaneously (see Figure 12.3). Wet
                                                       Figure 12.3 A wafer cassette with 25 wafers of 100 mm
           benches are reliable tools, but chemical consumption can
                                                       diameter is being lowered into a cleaning bath. Photo
           be high. There are two main approaches: either using
                                                       courtesy Paula Heikkil¨ a, Helsinki University of Technology
           rather concentrated chemicals for cleaning many batches
           before changing the chemicals or using dilute chemicals
           and changing them after each and every batch.  of work was done in uncovering the mechanisms of
             From the end of the 1960s till the early 1990s, wet  contamination and contamination removal.
           cleaning relied on a few proven methods, which were,  The standard clean, known as the RCA-clean
           however, never studied in detail, and whose working  (invented at RCA Laboratories), consists of a sequence
           mechanisms were unknown. In the 1990s, a vast amount  of different wet cleans. They are each effective in

                            Table 12.1 Wet-cleaning solutions: typical compositions and conditions
                  Name/alias               Chemical composition      Temperature/time
                                                                          ◦
                  RCA-1                    NH 4 OH:H 2 O 2 :H 2 O (1:1:5)  50–80 C, 10–20 min
                  SC-1, standard clean; aka
                  APM; ammonia peroxide
                    mixture
                                                                          ◦
                  RCA-2                    HCl:H 2 O 2 :H 2 O (1:1:6)  50–80 C, 10–20 min
                  SC-2; standard clean-2;
                  aka HPM, hydrogen
                    chloride-peroxide mixture
                                                                       ◦
                  SPM                      H 2 SO 4 :H 2 O 2 (4:1)   120 C, 10–20 min
                  Sulphuric peroxide mixture,
                  aka Piranha
                  DHF (dilute HF)          HF:H 2 O (1:20 – 500)     Room temperature, 1 min
                  Standard chemicals come in
                    the following
                    concentrations:
                  HCl                      37%
                  H 2 SO 4                 96%
                  H 2 O 2                  30%
                  NH 4 OH                  29%
                  HF                       49%

                  Bath life: If the bath is used for more than one batch before changing, chemical concentration is monitored, and, for
                  example, ammonia evaporation or peroxide decomposition can be compensated by ‘spiking’, that is, refreshing the bath
                  with an injection of fresh chemicals.
                  Disposal: HF requires a separate disposal system because its health effects are different from other mineral acids, which
                  may all be collected in the same container. Sometimes, acids that contain heavy metals must be collected separately
                  (e.g., titanium or cobalt containing salicide etchants).
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