Page 214 - Sami Franssila Introduction to Microfabrication
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19




                                Self-aligned Structures










           Lithography is most often discussed as a resolution
           question: how small a structure can be printed on the
           wafer? Alignment is equally important: how closely can
           the structures on the different mask levels be aligned
           with each other? Device-packing density is clearly
           dependent on both.
             Self-alignment is a process by which two struc-
           tures are aligned to each other non-lithographically.
           The existing structures act as masks for subsequent
           steps. Unlike photoresist, these structures are fixed and
           are integral parts of the device. Self-alignment offers
           inherently accurate alignment between two structures
           because alignment is not determined by the optome-
           chanical lithography tool but by the structures and mate-
           rials themselves.
             In this chapter, the examples are related to CMOS but
           self-alignment is not limited to CMOS: it can be applied
           widely in microdevice fabrication. More examples
           will be presented in chapters on sacrificial structures
           (Figure 22.11), bipolar technology (Figure 26.3), pro-
           cessing on non-silicon substrates (Figure 29.3) and
           Moore’s law (Figure 38.2).                  Figure 19.1 Non-self-aligned Al-gate versus self-aligned
                                                       polysilicon gate MOS. Leftside is Al-gate, right side
                                                       polygate
           19.1 MOS GATE MODULE
           Aluminium gate MOS is an example of a non-self-
           aligned transistor. Its gate module fabrication flow  oxide etching in BHF;
           shown below is highly simplified (Figure 19.1). After  photoresist stripping;
                                                                         ◦
           aluminium gate, the self-aligned polysilicon gate process  boron diffusion at 1000 C;
           will be presented.                          thick diffusion mask oxide is etched away in HF;
                                                       wafer cleaning
                                                       gate oxidation;
           Al-gate MOS process flow                     aluminium sputtering;
           thermal oxidation of silicon; thick oxide for diffu-  lithography #2: aluminium gate pattern;
             sion masking;                             aluminium etching;
           lithography #1: photoresist pattern formed on oxide;  photoresist stripping.

           Introduction to Microfabrication  Sami Franssila
            2004 John Wiley & Sons, Ltd  ISBNs: 0-470-85105-8 (HB); 0-470-85106-6 (PB)
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