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Self-aligned Structures 197



           19.5 EXERCISES                               4. Estimate the final TiSi 2 film thickness for a two-
                                                          step nitrogen annealing process given that the initial
           1a. How thick a titanium silicide layer will be formed
              from a 100 nm thick titanium layer under argon  titanium thickness is 50 nm.
              annealing?
           1b. Where is the surface of TiSi 2 relative to original
              silicon surface?                         REFERENCES AND RELATED READINGS
            2. What was the original titanium thickness in  Gambino, J.P. & E.G. Colgan: Silicides and ohmic contacts,
              Figure 19.5?                              Mater. Chem. Phy., 52 (1998), 99–146.
            3. Analyse the fabrication steps of the dual-silicide
                                                       Hou, T.-H. et al: Improvement of junction leakage of nickel
              structure shown below. Oxide is grey; silicides
                                                        silicided junction by a Ti-capping layer, IEEE EDL, 20
              are black and dotted black. A thick deposited and  (1999), 572.
              etched silicide on gate; and a thin, self-aligned  Kittl, J.A. et al: Salicides and alternative technologies for
              silicide on source/drain areas.           future ICs: Part I, Solid State Technol., (1999), 81; Part II
                                                        August 1999, p. 55.
                                                       Lasky, J.B. et al: Comparison of transformation to low-
                                                        resistivity phase and agglomeration of TiSi 2 and CoSi 2 , IEEE
                                                        TED, 38 (1991), 262.
                                                       Mann, R.W. et al: Silicides and local interconnections for high-
                                                        performance VLSI applications, IBM J. Res. Dev., 39 (1995),
                                                        403.
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