Page 322 - Sami Franssila Introduction to Microfabrication
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                  Processing on Non-silicon Substrates







                                                                                ◦
           29.1 SUBSTRATES                             loses its stiffness above ca. 500 C (very much depen-
                                                       dent on exact composition). Secondly, sodium diffusion
           We are already familiar with devices made on non-  at elevated temperatures can be detrimental to elec-
           silicon substrates: the acoustic resonator of Figure 7.9  tronic devices.
           and the passive integrated chip of Figure 24.13 were
                                                         Quartz is pure silicon oxide, just like fused silica,
           fabricated on glass/fused silica because substrate capac-
                                                       so there is no alkali metal contamination risk. While
           itances had to be eliminated. The photomask is also
                                                       fused silica is glass in the sense of being amorphous,
           a microstructure on glass, even though it is not usu-  quartz is crystalline, but the word quartz is often used as
           ally considered one. It shows many of the issues that  shorthand for fused silica. Etching of crystalline quartz.
           make non-silicon substrates different: it is square, thick  The etching of quartz in HF-based solutions leads to
           and made of glass, which is not a well-defined material
           like silicon. The coefficient of thermal expansion (CTE)  crystal plane-dependent etching, just like silicon etching
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           for soda lime glass is 10 ppm/ C (2.6 ppm/ C for Si),  in alkaline solutions. This crystallinity has important
           and as a photomask material soda lime glass is limited  implications for piezoelectric devices, which must be
           to applications above 3 µm linewidths in which dimen-  oriented along proper crystal axes.
           sional control requirements are lax (remember exercise  Flat panel displays (FPDs) are the most important
           9.3). The big difference in CTE relative to silicon makes  devices fabricated on glass, by sales volume. Radiation
           soda lime glass unsuitable for anodic bonding.  detectors and photodetectors of various designs have
             Glasses contain, by definition, alkali metals, usually  been made on glass substrates, using a-Si, SiC and
           sodium. These alkali ions are essential for some  diamond as active materials. Glass substrates have
                                                       several advantages from a manufacturing point of view:
           applications, such as anodic bonding even though they
                                                       they are available in large sizes; 50 × 60 cm is fairly
           are detrimental to electronic devices. Pyrex glass has
                                                       typical, and 140 × 185 cm is available. Secondly, glass
           composition SiO 2 :B 2 O 3 :Al 2 O 3 :Na 2 O in the approximate
           ratio 80:10:5:5. Pyrex glass is available in round formats  is cheap. Thirdly, it is fairly smooth and can be cleaned
           and is extensively used in anodic bonding, because its  with RCA-cleans just like silicon wafers; in fact, the
           CTE matches that of silicon. In photoactive glasses there  RCA-clean was invented for glass cleaning in TV-
           are also lithium and other exotic metals, which are major  picture tube manufacturing.
           contamination risks. Photoactive glasses have CTEs four  Some problems of non-silicon substrates are related to
           times that of silicon, which excludes anodic bonding.  processing them in a silicon-oriented lab. Even though
           Fused silica is 100% SiO 2 and is quite compatible with  fused silica wafers are round like silicon, have flats
           silicon processes. It is mechanically strong enough to  like silicon and are available in the same thicknesses
           withstand standard high-temperature process steps and  as silicon, complications can still arise, especially in
           it is available up to the 300 mm wafer size, which has  automated tools. The detection of the presence and the
           made it the material of choice for some silicon-based  movements of wafers are based on either optical or
           optical devices. However, because of the lack of mobile  capacitive sensors, and these are fooled by transparent
           ions, it is not amenable to anodic bonding.  dielectric wafers. Amorphous silicon or polysilicon
             The limited temperature range available for process-  deposition on the wafer backside can be used as a
           ing is a hindrance for processing on glass. This comes  preventive measure, but the role of this extra film needs
           from two main factors: glass is mechanically soft and it  to be considered for all process steps and tools.

           Introduction to Microfabrication  Sami Franssila
            2004 John Wiley & Sons, Ltd  ISBNs: 0-470-85105-8 (HB); 0-470-85106-6 (PB)
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