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2.3 Fabrication Techniques                                                     31







                                                                         V
                                         Glass
                                        Silicon

                                    Hotplate


                  Figure 2.16  Setup for anodic bonding.



                  the deposition rate for glass sputtering is very low, and obtaining a uniform thick-
                  ness as the layer grows is not a trivial task. Bonding to silicon with evaporated glass
                  is also possible [35]. High compressive stress, much of which can be annealed out
                  for layers up to 10 µm thick, can cause serious bowing of the wafers and control of
                  the glass composition due to loss of sodium during evaporation is difficult. Spin-
                  on-glass layers suitable for anodic bonding have been prepared [36]. One such
                  preparation consists of a mixture of TEOS, MTEOS, and a potassium salt dissolved
                  in ethanol with which layers up to 6 µm thick have been deposited. The layers are
                  reported to have low intrinsic stress (30 MPa), are stable at temperatures above the
                  typical bonding temperature (420°C), and have good uniformity across a 6-inch
                  wafer (±20 nm) and low surface roughness (rms: 0.5 nm).


                  2.3.5.3  Eutectic Bonding
                  Eutectic bonding utilizes the eutectic properties of two materials combined, the
                  combination having a lower melting point than each of the individual constituents.
                  A common combination is silicon-gold for which the eutectic state occurs at a tem-
                  perature of 363°C, the lowest bonding temperature for this system [37]. A typical
                  composition is 97.1% Au and 2.85% Si by weight, which can be bonded at a tem-
                  perature of 386°C. The process involves placing the gold in contact with the silicon
                  and heating, causing the gold atoms to diffuse into the silicon. When the eutectic
                  composition is reached, a liquid layer is formed at the interface and the eutectic
                  alloy grows until the gold is exhausted. The alloy can then be cooled slowly, causing
                  it to solidify and hence forming the bond. The gold can be deposited on one of the
                  silicon surfaces by evaporation or sputtering, or a preform can be placed between
                  the two surfaces to be bonded. The joints formed with this technique are hermetic.
                  A drawback with this process is that the mismatch in thermal expansion coefficients
                  results in high residual stresses within the alloy. In addition, these stresses change
                  with time due to creep.


                  2.3.5.4 Adhesive Bonding
                  Micromachined components can be bonded together using a number of commer-
                  cially available adhesives that possess a wide range of characteristics. There are, for
                  example, numerous epoxies available with a wide range of thermal, electrical, and
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