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36                                                 Materials and Fabrication Techniques


                                                  Potentiostat




                                                I=0


                                    +                              −

                                               electrode           electrode



                                     n-Si      Counter             Reference


                                 p-Si               Etchant
                 Figure 2.19  Setup for electrochemical etch stop.





                 2.3.11  Focused Ion Beam Etching and Deposition
                 Focused ion beam (FIB) technology enables localized milling and deposition of con-
                 ductors and insulators with high precision. Milling can be accomplished by scanning
                 a focused beam of energetic ions across a surface. Deposition occurs by a CVD reac-
                 tion induced by the ion beam. A wide variety of materials can be etched or deposited
                 by FIB technology and many different ions can be used. Feature sizes of the order of
                 1 µm with tolerances of 0.1 µm can be achieved. However, since it is a serial single
                 substrate process, it can be slow and time consuming. Examples of the use of FIB
                 technology are the release of micromechanical structures such as accelerometers and
                 actuators [49] and the deposition of W and SiO [50].
                                                            2

          References

                  [1] Hedlund, C., et al., “Anisotropic Etching of Z-Cut Quartz,” J. Micromech. Microeng., Vol.
                     3, 1993, pp. 65–73.
                  [2] Kruelevitch, M., et al., “Thin Film Shape Memory Alloy Actuators,” J. Microelectromech.
                     Syst., Vol. 5, 1996, pp. 270–282.
                  [3] Kovacs, G., Micromachined Transducers Sourcebook, New York: WCB/McGraw-Hill,
                     1998.
                  [4] Yang, J., et al., “A New Technique for Producing Large-Area As-Deposited Zero-Stress
                     LPCVD Polysilicon Films: The Multipoly Process,” J. Microelectromech. Syst., Vol. 9,
                     2000, pp. 485–494.
                  [5] Seideman, V., S. Bütefisch, and S. Büttgenbach, “Application and Investigation of In-Plane
                     Compliant SU8-Structures for MEMS,” Transducers ’01, Munich, Germany, June 10–14,
                     2001, pp. 1616–1619.
                  [6] Daniel, J., et al., “Large Area MEMS Fabrication with SU8 Photoresist Applied to an X-Ray
                     Image Sensor,” Proc. SPIE, Santa Clara, CA, September 2000, pp. 40–48.
                  [7] Köser, H., et al., “A High Torque Density MEMS Magnetic Induction Machine,” Transduc-
                     ers ’01, Munich, Germany, June 10–14, 2001, pp. 284–287.
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